BSC

BSC084P03NS3 G vs BSC082N10LS G vs BSC082N10LSGATMA1

 
PartNumberBSC084P03NS3 GBSC082N10LS GBSC082N10LSGATMA1
DescriptionMOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2MOSFET N-CH 100V 100A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V100 V-
Id Continuous Drain Current78.6 A13.8 A-
Rds On Drain Source Resistance6.1 mOhms8.2 mOhms-
Vgs th Gate Source Threshold Voltage3.1 V--
Vgs Gate Source Voltage25 V20 V-
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W156 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS P3OptiMOS 2-
Transistor Type1 P-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min33 S--
Fall Time8 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time134 ns24 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time33 ns53 ns-
Typical Turn On Delay Time16 ns19 ns-
Part # AliasesBSC084P03NS3GATMA1 BSC84P3NS3GXT SP000473020BSC082N10LSGATMA1 BSC82N1LSGXT SP000379609-
Unit Weight0.003527 oz0.007055 oz-
  • 시작
  • BSC 999
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
BSC0906NS MOSFET N-Ch 30V 63A TDSON-8 OptiMOS
BSC0902NSI MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC084P03NS3 G MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
BSC0901NS MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC084P03NS3E G MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
BSC0901NSIXT MOSFET N-Ch 30V 100A TDSON-8
BSC0901NSI MOSFET N-Ch 30V 100A TDSON-8
BSC0902NS MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC0901NSATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC0902NSATMA1 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC0904NSI MOSFET N-Ch 30V 78A TDSON-8 OptiMOS
BSC084P03NS3GATMA1 MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
BSC084P03NS3 G Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON (Alt: BSC084P03NS3 G)
BSC084P03NS3GATMA1 MOSFET P-CH 30V 14.9A TDSON-8
BSC0901NS Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: BSC0901NS)
BSC0901NSI Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC0901NSI)
BSC0902NS Trans MOSFET N-CH 30V 24A 8-Pin TDSON T/R (Alt: BSC0902NS)
BSC0902NSATMA1 MOSFET N-CH 30V 100A 8TDSON
BSC0902NSI Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP
BSC0902NSIATMA1 MOSFET N-CH 30V 100A 8TDSON
BSC0904NSI Trans MOSFET N-CH 30V 20A 8-Pin TDSON T/R (Alt: BSC0904NSI)
BSC0904NSIATMA1 MOSFET N-CH 30V 20A 8TDSON
BSC0906NS Trans MOSFET N-CH 30V 18A 8-Pin TDSON T/R (Alt: BSC0906NS)
BSC0906NSATMA1 MOSFET N-CH 30V 18A 8TDSON
BSC0908NSATMA1 MOSFET N-CH 34V 49A 8TDSON
BSC0901NSATMA1 MOSFET N-CH 30V 100A 8TDSON
BSC0901NSIATMA1 MOSFET N-CH 30V 28A 8TDSON
BSC082N10LSGATMA1 MOSFET N-CH 100V 100A TDSON-8
BSC084P03NS3EGATMA1 MOSFET P-CH 30V 14.9A TDSON-8
BSC085N025S G MOSFET N-CH 25V 35A TDSON-8
BSC082N10LS G MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
BSC084P03NS3E G RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
Infineon Technologies
Infineon Technologies
BSC0901NSIATMA1 MOSFET LV POWER MOS
BSC0904NSIATMA1 MOSFET LV POWER MOS
BSC0906NSATMA1 MOSFET LV POWER MOS
BSC084P03NS3EGATMA Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8
BSC082N10LSGATMA1 , TDK5 신규 및 오리지널
BSC084P03NS3EG 신규 및 오리지널
BSC084P03NS3GATMA1 , TDM 신규 및 오리지널
BSC0901NS , TDZ TR 10 , 신규 및 오리지널
BSC0902NSS 신규 및 오리지널
BSC0904NS1 0904NS1 신규 및 오리지널
BSC0904NSH 신규 및 오리지널
BSC0906NS 0906NS 신규 및 오리지널
BSC0906NS E8189 Trans MOSFET N-CH 30V 18A 8-Pin TDSON T/R (Alt: BSC0906NS E8189)
BSC082N10LSG Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON T/R (Alt: BSC082N10LS G)
BSC084P03NS3G MOSFET, P-CH, -30V, -78.6A, TDSON
BSC085N025SG MOSFET N-Ch 25V 35A TDSON-8
BSC0906 신규 및 오리지널
BSC0908NS IGBT Transistors MOSFET N-Ch 30V 49A TDSON-8 OptiMOS
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