 |  | | |
| PartNumber | BSC0925ND | BSC0924NDIATMA1 | BSC0925NDATMA1 |
| Description | MOSFET N-Ch 30V 40A TISON-8 | MOSFET LV POWER MOS | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TISON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 4.2 mOhms, 4.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 17 nC, 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 2 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 38 S, 38 S | - | - |
| Fall Time | 3 ns, 3 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.8 ns, 3.8 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns, 17 ns | - | - |
| Typical Turn On Delay Time | 4.7 ns, 4.7 ns | - | - |
| Part # Aliases | BSC0925NDATMA1 BSC925NDXT SP000934752 | BSC0924NDI BSC924NDIXT SP000934750 | BSC0925ND BSC925NDXT SP000934752 |
| Unit Weight | 0.003386 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC0993NDATMA1 | MOSFET | |
| BSC093N04LS G | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 | ||
| BSC098N10NS5ATMA1 | MOSFET Pwr transistor 100V OptiMOS 5 | ||
| BSC097N06NSATMA1 | MOSFET N-Ch 60V 46A TDSON-8 | ||
| BSC0925ND | MOSFET N-Ch 30V 40A TISON-8 | ||
| BSC097N06NS | MOSFET N-Ch 60V 46A TDSON-8 | ||
| BSC100N03MSGATMA1 | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | ||
| BSC100N03MS G | MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M | ||
| BSC093N15NS5ATMA1 | MOSFET MV POWER MOS | ||
| BSC094N06LS5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC0996NSATMA1 | MOSFET TRANSITIONAL MOSFETS | ||
| BSC096N10LS5ATMA1 | MOSFET TRENCH >=100V | ||
| BSC097N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC0925ND | MOSFET N-Ch 30V 40A TISON-8 | ||
| BSC093N04LS G | Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G) | ||
| BSC093N04LSGATMA1 | MOSFET N-CH 40V 49A TDSON-8 | ||
| BSC094N03S G | MOSFET N-CH 30V 35A TDSON-8 | ||
| BSC094N06LS5ATMA1 | MOSFET N-CHANNEL 60V 47A 8TDSON | ||
| BSC097N06NS | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP (Alt: BSC097N06NS) | ||
| BSC097N06NSATMA1 | MOSFET N-CH 60V 46A TDSON-8 | ||
| BSC100N03LSGATMA1 | MOSFET N-CH 30V 44A TDSON-8 | ||
| BSC100N03MS G | Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP | ||
| BSC0924NDIATMA1 | MOSFET 2N-CH 30V 17A/32A TISON8 | ||
| BSC0925NDATMA1 | MOSFET 2N-CH 30V 15A TISON8 | ||
| BSC093N15NS5ATMA1 | MOSFET N-CH 150V 87A TDSON-8 | ||
| BSC097N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC0993NDATMA1 | MOSFET N-CH 30V 8TISON | ||
| BSC0996NSATMA1 | MOSFET N-CHANNEL 34V 13A 8TDSON | ||
| BSC100N03MSGATMA1 | MOSFET N-CH 30V 44A TDSON-8 | ||
| BSC098N10NS5ATMA1 | IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5 | ||
Infineon Technologies |
BSC0925NDATMA1 | MOSFET LV POWER MOS | |
| BSC093N04LS | 신규 및 오리지널 | ||
| BSC093N04LSG | 40V,49A,N Channel Power MOSFET | ||
| BSC093N15NS5 | 신규 및 오리지널 | ||
| BSC094N03S | 신규 및 오리지널 | ||
| BSC094N03SG | 신규 및 오리지널 | ||
| BSC098N10NS5 | MOSFET Pwr transistor 100V OptiMOS 5 | ||
| BSC100N03LS | 신규 및 오리지널 | ||
| BSC100N03LS G | MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th | ||
| BSC100N03MS | 신규 및 오리지널 | ||
| BSC093N04LSGATMA1 , TDZ | 신규 및 오리지널 | ||
| BSC094N06LS5 | 신규 및 오리지널 | ||
| BSC098N10NS5ATMA1INFINEO | 신규 및 오리지널 | ||
| BSC100N03LSG , TDZ TR 6. | 신규 및 오리지널 | ||
| BSC100N03LSG,100N03LS, | 신규 및 오리지널 | ||
| BSC093N04LSGATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSC093N15NS5ATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSC098N10NS5ATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSC100N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC100N03MSG | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC100N03MS G) |