 |  | | |
| PartNumber | BSM600C12P3G201 | BSM50GP60B2BOSA1 | BSM50GD170DLC |
| Description | Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02 | Infineon IGBT Module BSM50GP60_B2 - ECONO2-5-1 | |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | SiC Power Module | - | - |
| Vf Forward Voltage | 1.8 V at 600 A | - | - |
| Vgs Gate Source Voltage | - 4 V, 22 V | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BSMx | - | - |
| Packaging | Tray | - | - |
| Configuration | Chopper | - | - |
| Technology | SiC | - | - |
| Brand | ROHM Semiconductor | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Delay Time | 70 ns | - | - |
| Fall Time | 65 ns | - | - |
| Id Continuous Drain Current | 576 A | - | - |
| Pd Power Dissipation | 2460 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 4 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Typical Turn Off Delay Time | 240 ns | - | - |
| Typical Turn On Delay Time | 70 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| BSM600C12P3G201 | Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02 | ||
| BSM50GP60B2BOSA1 | Infineon IGBT Module BSM50GP60_B2 - ECONO2-5-1 | ||
| BSM50GD170DLC | 신규 및 오리지널 | ||
| BSM600D12P3G001 | IPM Module MOSFET 600A 2500Vrms 11-Pin (Alt: BSM600D12P3G001) | ||
| BSM600C12P3G201 | BSM600C12P3G201 IS A CHOPPER MOD | ||
Infineon Technologies |
BSM50GP120 | IGBT Modules 1200V 50A PIM | |
| BSM50GX120DN2 | IGBT Modules | ||
| BSM50GD120DN2E3226 | IGBT Modules N-CH 1.2KV 50A | ||
| BSM50GP60 | IGBT Modules 600V 50A PIM | ||
| BSM50GP60G | IGBT Modules 600V 50A PIM | ||
| BSM50GD60DLC | IGBT Modules 600V 50A 3-PHASE | ||
| BSM50GP120BOSA1 | IGBT MODULE 1200V 50A | ||
| BSM50GX120DN2 | Trans IGBT Module N-CH 1.2kV 50A nom 36-Pin (Alt: SP000100372) | ||
| BSM50GD120DN2E3226BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM50GD170DLBOSA1 | IGBT 2 LOW POWER ECONO3-1 | ||
| BSM50GD60DLCBOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM50GP60BOSA1 | IGBT 2 LOW POWER ECONO2-5 | ||
| BSM50GP60GBOSA1 | IGBT 2 LOW POWER ECONO3-3 | ||
| BSM50GX120DN2BOSA1 | LOW POWER ECONO | ||
| BSM50GD120DN2G | IGBT BSM50GD120DN2GBOSA1 | ||
| BSM50GP60G | IGBT Modules 600V 50A PIM | ||
| BSM50GD120DN2E3226 | IGBT Modules N-CH 1.2KV 50A | ||
| BSM50GP120 | IGBT Modules 1200V 50A PIM | ||
| BSM50GD60DLC | IGBT Modules 600V 50A 3-PHASE | ||
| BSM50GP60 | IGBT Modules 600V 50A PIM | ||
Panduit |
BSM6-L | Terminals Metric Butt Splice non-insulated, 4.0 | |
| BSM6-X | Terminals Metric Butt Splice non-insulated, 4.0 | ||
Infineon Technologies |
BSM50GD120DN2G | IGBT Modules 1200V 50A 3-PHASE | |
| BSM50GD60DLC-E3226 | IGBT Modules 600V 50A 3-PHASE | ||
| BSM6-30 | REVERSING LINK | ||
| BSM50GD120DN2E3224 | 신규 및 오리지널 | ||
| BSM50GD120N2 | 신규 및 오리지널 | ||
| BSM50GD170DLV | 신규 및 오리지널 | ||
| BSM50GD60DL | 신규 및 오리지널 | ||
| BSM50GD60DLCE3226 | 신규 및 오리지널 | ||
| BSM50GD60DN2 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES | ||
| BSM50GD60DN2E3226 | 신규 및 오리지널 | ||
| BSM50GP120/DN2 | 신규 및 오리지널 | ||
| BSM50GP120G | 신규 및 오리지널 | ||
| BSM50GP60 B2 | 신규 및 오리지널 | ||
| BSM50GP60C | 신규 및 오리지널 | ||
| BSM60-1401 | 신규 및 오리지널 | ||
| BSM600A17DDN2 | 신규 및 오리지널 | ||
| BSM600GA120DLC | IGBT Modules N-CH 1.2KV 900A | ||
| BSM600GA120DLCS | Trans IGBT Module N-CH 1.2kV 600A nom 3900W 4-Pin 106.4x61.4mm - Bulk (Alt: BSM600GA120DLCS) | ||
| BSM600GA120DNLC | 신규 및 오리지널 | ||
| BSM652F | 신규 및 오리지널 | ||
| BSM6821 | 신규 및 오리지널 | ||
| BSM50GD120DN2_E3226 | 신규 및 오리지널 | ||
| BSM50GD170DL | IGBT Modules N-CH 1.7KV 100A |