 | | | |
| PartNumber | BSZ0506NSATMA1 | BSZ050N03LS G | BSZ050N03LSGATMA1 |
| Description | MOSFET LV POWER MOS | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 4.4 mOhms | 4.2 mOhms | 4.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 11 nC | 35 nC | 35 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 27 W | 50 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 49 S | 38 S | 38 S |
| Fall Time | 2 ns | 3.6 ns | 3.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.4 ns | 4 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 21 ns | 21 ns |
| Typical Turn On Delay Time | 2.3 ns | 5.2 ns | 5.2 ns |
| Part # Aliases | BSZ0506NS SP001281636 | BSZ050N03LSGATMA1 BSZ5N3LSGXT SP000304139 | BSZ050N03LS BSZ5N3LSGXT G SP000304139 |
| Unit Weight | 0.001212 oz | - | 0.070548 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ063N04LS6ATMA1 | MOSFET 40V Mosfet 6,3mOhm, S3O8MOSFET, Power MOSFET | |
| BSZ0589NSATMA1 | MOSFET | ||
| BSZ058N03LSGATMA1 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ060NE2LSATMA1 | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | ||
| BSZ065N03LS | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ058N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03MSGXT | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ0506NSATMA1 | MOSFET LV POWER MOS | ||
| BSZ050N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ050N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ050N03LSGATMA1 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ0506NSATMA1 | MOSFET N-CH 30V 15A 8TSDSON | ||
| BSZ050N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ050N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ058N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ058N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ060NE2LSATMA1 | MOSFET N-CH 25V 12A TSDSON-8 | ||
| BSZ0589NSATMA1 | MOSFET N-CHANNEL 30V 17A 8TDSON | ||
Infineon Technologies |
BSZ050N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ058N03MSGXT | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ0506NS | MOSFETs | ||
| BSZ0506NS .. | 신규 및 오리지널 | ||
| BSZ050N030LSG | 신규 및 오리지널 | ||
| BSZ050N03LS | 신규 및 오리지널 | ||
| BSZ050N03LS G | Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP | ||
| BSZ050N03LSG | 신규 및 오리지널 | ||
| BSZ050N03LSGXT | 신규 및 오리지널 | ||
| BSZ050N03M | 신규 및 오리지널 | ||
| BSZ050N03MS | 신규 및 오리지널 | ||
| BSZ050N03MS-G | 신규 및 오리지널 | ||
| BSZ050N03MSG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ058N03L | 신규 및 오리지널 | ||
| BSZ058N03LS | 신규 및 오리지널 | ||
| BSZ058N03LSG | 40 A, 30 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSZ058N03MSG | Trans MOSFET N-CH 30V 14A 8-Pin TSDSON T/R (Alt: BSZ058N03MS G) | ||
| BSZ058N03MSG QFN8 | 신규 및 오리지널 | ||
| BSZ058N03MSGATMA1 , TFZV | 신규 및 오리지널 | ||
| BSZ058N03S G | 신규 및 오리지널 | ||
| BSZ060NE2LS | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R | ||
| BSZ060NE2LSG | 신규 및 오리지널 | ||
| BSZ065N03L | 신규 및 오리지널 | ||
| BSZ065N03LS | Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP (Alt: BSZ065N03LS) | ||
| BSZ050N03LSGATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSZ058N03LSGATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSZ060NE2LSATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSZ060NE2LS G | 신규 및 오리지널 | ||
| BSZ050N03MS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ058N03LS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03MS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |