 |  |  | |
| PartNumber | CSD19532Q5B | CSD19532KTTT | CSD19532KTT |
| Description | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | MOSFET 100V, N-channel NexFET Pwr MOSFET | Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSON-CLIP-8 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 140 A | 200 A | - |
| Rds On Drain Source Resistance | 4.9 mOhms | 5.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.6 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 48 nC | 44 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 195 W | 250 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | 19.7 mm | - |
| Length | 6 mm | 9.25 mm | - |
| Series | CSD19532Q5B | CSD19532KTT | CSD19532KTT |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 10.26 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 84 S | - | - |
| Fall Time | 6 ns | 2 ns | 2 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 3 ns | 3 ns |
| Factory Pack Quantity | 2500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 14 ns | 14 ns |
| Typical Turn On Delay Time | 7 ns | 9 ns | 9 ns |
| Unit Weight | 0.003714 oz | 0.068643 oz | - |
| Product | - | Power MOSFET | - |
| Type | - | N-Channel MOSFET | - |
| Moisture Sensitive | - | Yes | - |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 136 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V |
| Rds On Drain Source Resistance | - | - | 6.6 mOhms |
| Qg Gate Charge | - | - | 44 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD19532Q5BT | MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150 | |
| CSD19532Q5B | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | ||
| CSD19532KTTT | MOSFET 100V, N-channel NexFET Pwr MOSFET | ||
| CSD19532KTTT | MOSFET N-CH 100V TO-263-3 | ||
| CSD19532KTT | Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R | ||
| CSD19532Q5B | Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R |