 | |  | |
| PartNumber | FCD380N60E | FCD360N65S3R0 | FCD3400N80Z |
| Description | MOSFET 600V N-Channel MOSFET | MOSFET SUPERFET3 650V 10A 360 mOhm | IGBT Transistors MOSFET SuperFET2 800V 850mOhm Zene |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 10.2 A | 10 A | - |
| Rds On Drain Source Resistance | 380 mOhms | 360 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 34 nC | 18 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 106 W | 83 W | - |
| Configuration | Single | Single | Single |
| Tradename | SuperFET II | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Product | MOSFET | - | - |
| Series | FCD380N60E | SuperFET3 | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor | - |
| Forward Transconductance Min | 10 S | 6 S | - |
| Fall Time | 10 ns | 10 ns | 14 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 11 ns | 6.4 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 64 ns | 34 ns | 22.7 ns |
| Typical Turn On Delay Time | 17 ns | 12 ns | 10 ns |
| Unit Weight | 0.009184 oz | - | 0.139332 oz |
| Channel Mode | - | Enhancement | Enhancement |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 32 W |
| Vgs Gate Source Voltage | - | - | 20 V 30 V |
| Id Continuous Drain Current | - | - | 2 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
| Rds On Drain Source Resistance | - | - | 3.4 Ohms |
| Qg Gate Charge | - | - | 7.4 nC |
| Forward Transconductance Min | - | - | 2 S |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCD380N60E | MOSFET 600V N-Channel MOSFET | |
ON Semiconductor |
FCD360N65S3R0 | MOSFET SUPERFET3 650V 10A 360 mOhm | |
| FCD3400N80Z | IGBT Transistors MOSFET SuperFET2 800V 850mOhm Zene | ||
| FCD360N65S3R0 | SUPERFET3 650V DPAK | ||
| FCD380N60E | MOSFET N CH 600V 10.2A DPAK | ||
| FCD380N60ECT | 신규 및 오리지널 |