FCD380N60E

FCD380N60E
Mfr. #:
FCD380N60E
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 600V N-Channel MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FCD380N60E 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
10.2 A
Rds On - 드레인 소스 저항:
380 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
34 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
106 W
구성:
하나의
상표명:
슈퍼펫 II
포장:
키:
2.39 mm
길이:
6.73 mm
제품:
MOSFET
시리즈:
FCD380N60E
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
10 S
가을 시간:
10 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
64 ns
일반적인 켜기 지연 시간:
17 ns
단위 무게:
0.009184 oz
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***ure Electronics
N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R
***ark
SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***et Europe
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R
***Components
MOSFET N-Ch SuperFET II 600V 10.2A DPAK
***ical
Trans MOSFET N-CH 600V 10.2A T/R
***i-Key
MOSFET N CH 600V 10.2A DPAK
***et
SUPERFET2 380MOHM, TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
부분 # 제조 설명 재고 가격
FCD380N60E
DISTI # V72:2272_06337701
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 1000:$0.8777
  • 500:$1.0141
  • 250:$1.1024
  • 100:$1.2248
  • 25:$1.5097
  • 10:$1.5301
  • 1:$1.9742
FCD380N60E
DISTI # V36:1790_06337701
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.8567
FCD380N60E
DISTI # FCD380N60ECT-ND
ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60EDKR-ND
ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60ETR-ND
ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 5000:$0.8408
  • 2500:$0.8732
FCD380N60E
DISTI # 32702549
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 9:$1.9742
FCD380N60E
DISTI # 32711099
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8219
FCD380N60E
DISTI # FCD380N60E
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.7139
  • 15000:€0.7649
  • 10000:€0.8239
  • 5000:€0.8919
  • 2500:€1.0709
FCD380N60E
DISTI # FCD380N60E
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.7599
  • 15000:$0.7789
  • 10000:$0.7889
  • 5000:$0.7999
  • 2500:$0.8049
FCD380N60E
DISTI # FCD380N60E
ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 125000:$1.0098
  • 62500:$1.0267
  • 25000:$1.0621
  • 12500:$1.1000
  • 7500:$1.1407
  • 5000:$1.1846
  • 2500:$1.2320
FCD380N60E
DISTI # 46AC0750
ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2057
  • 1000:$1.0500
  • 500:$1.2400
  • 250:$1.3200
  • 100:$1.3900
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7000
  • 1:$1.9800
FCD380N60E
DISTI # 63W2839
ON SemiconductorSF2 600V 380MOHM E DPAK / REEL0
  • 25000:$0.6730
  • 10000:$0.6930
  • 2500:$0.7190
  • 1:$0.7250
FCD380N60E
DISTI # 512-FCD380N60E
ON SemiconductorMOSFET 600V N-Channel MOSFET
RoHS: Compliant
2416
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8930
  • 2500:$0.8800
FCD380N60EFairchild Semiconductor Corporation 828
    FCD380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant
    1998
      FCD380N60E
      DISTI # 2825202
      ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3
      RoHS: Compliant
      2057
      • 5000:$1.1700
      • 1000:$1.2100
      • 500:$1.3100
      • 250:$1.5900
      • 100:$1.9400
      • 25:$2.8400
      • 5:$3.3100
      FCD380N60E
      DISTI # 2825202
      ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-34577
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2200
      • 1:£1.5900
      영상 부분 # 설명
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

      OMO.#: OMO-DP83TC811SWRNDRQ1

      Ethernet ICs AUTO ETHERNET PHY
      NTB082N65S3F

      Mfr.#: NTB082N65S3F

      OMO.#: OMO-NTB082N65S3F

      MOSFET SUPERFET3 650V D2PAK PKG
      NCP1562ADBR2G

      Mfr.#: NCP1562ADBR2G

      OMO.#: OMO-NCP1562ADBR2G

      Switching Controllers HI PERF RESET PWM CONTLR
      TLV62568ADRLR

      Mfr.#: TLV62568ADRLR

      OMO.#: OMO-TLV62568ADRLR

      Switching Voltage Regulators 1-A BUCK CONVERTER W FORCED PWM NO PWRGD
      TPS7A3901DSCT

      Mfr.#: TPS7A3901DSCT

      OMO.#: OMO-TPS7A3901DSCT

      LDO Voltage Regulators Dual,150mA,Wide-Vin +/-(LDO) Vreg
      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1

      Current & Power Monitors & Regulators AEC-Q100, 36V, Bi-Directional, High Accuracy, Low-/High-Side, I2C Out Current/Power Monitor w/Alert 10-VSSOP -40 to 125
      4946

      Mfr.#: 4946

      OMO.#: OMO-4946

      Standoffs & Spacers M/F NYLON STANDOFF 4-40 1.00 L
      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1-TEXAS-INSTRUMENTS

      Current & Power Monitors & Regulators Hi-Side Msmt Bi-Dir Current/Pwr Mon
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

      OMO.#: OMO-DP83TC811SWRNDRQ1-TEXAS-INSTRUMENTS

      Low Power Automotive PHY
      NTB082N65S3F

      Mfr.#: NTB082N65S3F

      OMO.#: OMO-NTB082N65S3F-ON-SEMICONDUCTOR

      SUPERFET3 650V D2PAK PKG
      유효성
      재고:
      Available
      주문 시:
      1985
      수량 입력:
      FCD380N60E의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.81
      US$1.81
      10
      US$1.54
      US$15.40
      100
      US$1.23
      US$123.00
      500
      US$1.07
      US$535.00
      1000
      US$0.89
      US$893.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
      최신 제품
      • Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • Compare FCD380N60E
        FCD3400N80Z vs FCD360N65S3R0 vs FCD380N60E
      • FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      Top