 | | | |
| PartNumber | FDD5690 | FDD5680 | FDD5810 |
| Description | MOSFET 60V N-Ch PowerTrench | MOSFET N-Ch PowerTrench | MOSFET LOW VOLTAGE |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 30 A | 38 A | 35 A |
| Rds On Drain Source Resistance | 23 mOhms | 17 mOhms | 16.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 3.2 W | 60 W | 88 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | PowerTrench | PowerTrench | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm | 6.73 mm |
| Series | FDD5690 | FDD5680 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | - |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 24 S | 30 S | - |
| Fall Time | 10 ns | 16 ns | 34 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | 75 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 35 ns | 26 ns |
| Typical Turn On Delay Time | 10 ns | 15 ns | 12 ns |
| Part # Aliases | FDD5690_NL | FDD5680_NL | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD5690 | MOSFET 60V N-Ch PowerTrench | |
| FDD5810-F085 | MOSFET LOW VOLTAGE | ||
| FDD5N50NZTM | MOSFET UNIFET2 500V | ||
| FDD5N50UTM-WS | MOSFET UniFET 500V 3A | ||
| FDD5680 | MOSFET N-Ch PowerTrench | ||
| FDD5N50NZFTM | MOSFET 500V N-Channel UniFET-II | ||
| FDD5N50FTM-WS | MOSFET UniFET 500V 3.5A | ||
| FDD5N50FTM-TWS | MOSFET MOSFET, UniFET 500V / 3.5A | ||
| FDD5N50TM-WS | MOSFET UniFET 500V 4A | ||
| FDD5810 | MOSFET LOW VOLTAGE | ||
| FDD5N50TM_WS | IGBT Transistors MOSFET UniFET 500V 4A | ||
| FDD5N50FTM_WS | IGBT Transistors MOSFET UniFET 500V 3.5A | ||
| FDD5670-NL | 신규 및 오리지널 | ||
| FDD5670FAIRCHILD | 신규 및 오리지널 | ||
| FDD5680-NL | 신규 및 오리지널 | ||
| FDD5680FSC | 신규 및 오리지널 | ||
| FDD5690-NL | 신규 및 오리지널 | ||
| FDD5690.. | Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| FDD5690CT | 신규 및 오리지널 | ||
| FDD5690FSC | 신규 및 오리지널 | ||
| FDD5690_Q | 신규 및 오리지널 | ||
| FDD5810_F085 | 60V, 35A, 27 OHM, NCH, POWER T | ||
| FDD5N15 | 신규 및 오리지널 | ||
| FDD5N50 | 신규 및 오리지널 | ||
| FDD5N50F | 신규 및 오리지널 | ||
| FDD5N50NZ | 신규 및 오리지널 | ||
| FDD5N50NZF | 신규 및 오리지널 | ||
| FDD5N50U | 신규 및 오리지널 | ||
| FDD5N50UTM | - Bulk (Alt: FDD5N50UTM) | ||
| FDD5N60NZ | 신규 및 오리지널 | ||
| FDD5690-CUT TAPE | 신규 및 오리지널 | ||
| FDD5N50NZTM-CUT TAPE | 신규 및 오리지널 | ||
| FDD5N50FTMWS | 신규 및 오리지널 | ||
ON Semiconductor |
FDD5680 | MOSFET N-CH 60V 8.5A D-PAK | |
| FDD5690 | MOSFET N-CH 60V 30A D-PAK | ||
| FDD5810 | MOSFET N-CH 60V 37A DPAK | ||
| FDD5N50FTM-WS | MOSFET N-CH 500V 3.5A DPAK | ||
| FDD5N50NZFTM | MOSFET N-CH 500V DPAK | ||
| FDD5N50NZTM | MOSFET N-CH 500V DPAK | ||
| FDD5N50TF_WS | MOSFET N-CH 500V 4A DPAK | ||
| FDD5N53TM_WS | MOSFET N-CH 530V 4A DPAK | ||
| FDD5810-F085 | MOSFET N-CH 60V 37A DPAK | ||
| FDD5N50TM-WS | MOSFET N-CH 500V 4A DPAK | ||
| FDD5N50FTF_WS | MOSFET N-CH 500V 3.5A DPAK | ||
| FDD5N50UTF_WS | MOSFET N-CH 500V 3A DPAK | ||
| FDD5N50UTM-WS | MOSFET, UNIFET, 500V, / 3A | ||
| FDD5N50FTM | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| FDD5N50TF | - Bulk (Alt: FDD5N50TF) | ||
| FDD5N50TM | Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| FDD5N53TM | Power Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |