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| PartNumber | GA10SLT12-220 | GA10SICP12-263 |
| Description | Schottky Diodes & Rectifiers 1200V 10A Schottky Rectifier | MOSFET 1200V 25A Std SIC CoPak |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | MOSFET |
| RoHS | Y | Y |
| Product | Schottky Diodes | - |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220 | TO-263-7 |
| If Forward Current | 10 A | - |
| Vrrm Repetitive Reverse Voltage | 1200 V | - |
| Vf Forward Voltage | 2.3 V | - |
| Technology | Si | SiC |
| Ir Reverse Current | 0.5 uA | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | GA10SLT12 | - |
| Packaging | Bulk | Reel |
| Operating Temperature Range | - 55 C to + 175 C | - |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Pd Power Dissipation | 128 W | 170 W |
| Product Type | Schottky Diodes & Rectifiers | MOSFET |
| Factory Pack Quantity | 30 | 50 |
| Subcategory | Diodes & Rectifiers | MOSFETs |
| Unit Weight | 0.081130 oz | 0.056438 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 1.2 kV |
| Id Continuous Drain Current | - | 25 A |
| Rds On Drain Source Resistance | - | 100 mOhms |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 55 nC |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Height | - | 4.597 mm |
| Length | - | 10.668 mm |
| Type | - | Transistor/Schottky Diode Co-Pack |
| Width | - | 9.169 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
GeneSiC Semiconductor |
GA10SLT12-220 | Schottky Diodes & Rectifiers 1200V 10A Schottky Rectifier | |
| GA10SICP12-263 | MOSFET 1200V 25A Std SIC CoPak | ||
| GA10SLT12-220 | Schottky Diodes & Rectifiers 1200V 10A Schottky Rectifie | ||
GeneSiC Semiconductor |
GA10SICP12-263 | TRANS SJT 1200V 25A TO263-7 |