 |  | | |
| PartNumber | HN1A01F-Y(TE85L,F) | HN1A01F-Y(TE85L) | HN1A01F-Y(TE85L.F) |
| Description | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-26-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | HN1A01 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
HN1A01F-Y(TE85L,F) | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | |
| HN1A01F-Y(TE85L,F) | Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A | ||
| HN1A01F-Y(TE85LF)CT-ND | 신규 및 오리지널 | ||
| HN1A01F-Y(TE85LF)DKR-ND | 신규 및 오리지널 | ||
| HN1A01F-Y(TE85LF)TR-ND | 신규 및 오리지널 | ||
| HN1A01F-Y(TE85L) | 신규 및 오리지널 | ||
| HN1A01F-Y(TE85L.F) | 신규 및 오리지널 | ||
| HN1A01F-Y(TE85LF) | 신규 및 오리지널 |