 |  | | |
| PartNumber | IPB065N03LGATMA1 | IPB065N03L G | IPB065N03LG |
| Description | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 5.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 56 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 3.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.2 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 5.5 ns | - | - |
| Part # Aliases | G IPB065N03L IPB65N3LGXT SP000254709 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB065N03LGATMA1 | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | |
| IPB065N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | ||
| IPB065N06L G | MOSFET N-CH 60V 80A D2PAK | ||
| IPB065N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
| IPB065N03LG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB065N06L | 신규 및 오리지널 | ||
| IPB065N06LG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |