IPW60R190E

IPW60R190E6 vs IPW60R190E6 6R190E6 vs IPW60R190E6(6R190E6)

 
PartNumberIPW60R190E6IPW60R190E6 6R190E6IPW60R190E6(6R190E6)
DescriptionMOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current20.2 A--
Rds On Drain Source Resistance170 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge63 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation151 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingTube--
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS E6--
Transistor Type1 N-Channel--
Width5.21 mm--
BrandInfineon Technologies--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesIPW60R190E6FKSA1 IPW6R19E6XK SP000797384--
Unit Weight1.340411 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPW60R190E6FKSA1 MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
IPW60R190E6 MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
IPW60R190E6FKSA1 MOSFET N-CH 600V 20.2A TO247
IPW60R190E6 6R190E6 신규 및 오리지널
IPW60R190E6(6R190E6) 신규 및 오리지널
IPW60R190E6,6R190E6,IPW6 신규 및 오리지널
IPW60R190E6,IPW60R165CP, 신규 및 오리지널
IPW60R190E6 Darlington Transistors MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
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