 |  |  | |
| PartNumber | IRF1503PBF | IRF1503LPBF | IRF1503SPBF |
| Description | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | MOSFET N-CH 30V 75A TO-262 | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 240 A | - | - |
| Rds On Drain Source Resistance | 3.3 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 130 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 330 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | Automotive MOSFET | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 48 ns | - | 48 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 130 ns | - | 130 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 59 ns | - | 59 ns |
| Typical Turn On Delay Time | 17 ns | - | 17 ns |
| Part # Aliases | SP001561384 | - | - |
| Unit Weight | 0.211644 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 200 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 190 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 3.3 mOhms |
| Qg Gate Charge | - | - | 130 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF1607PBF | MOSFET MOSFT 75V 142A 7.5mOhm 210nC | |
| IRF150P220XKMA1 | MOSFET TRENCH_MOSFETS | ||
| IRF1503STRLPBF | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
| IRF1503PBF | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
| IRF150P221XKMA1 | MOSFET TRENCH_MOSFETS | ||
| IRF1607 | MOSFET N-CH 75V 142A TO-220AB | ||
| IRF1704 | MOSFET N-CH 40V 170A TO-220AB | ||
| IRF1902PBF | MOSFET N-CH 20V 4.2A 8-SOIC | ||
| IRF1503STRRPBF | MOSFET N-CH 30V 75A D2PAK | ||
| IRF1503LPBF | MOSFET N-CH 30V 75A TO-262 | ||
| IRF1902GPBF | MOSFET N-CH 20V 4.2A 8SOIC | ||
| IRF1607PBF | Darlington Transistors MOSFET MOSFT 75V 142A 7.5mOhm 210nC | ||
| IRF1902TRPBF | IGBT Transistors MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
| IRF1902GTRPBF | IGBT Transistors MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
| IRF1503SPBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
| IRF1503STRLPBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
| IRF1503PBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
Infineon / IR |
IRF1902TRPBF | MOSFET MOSFT 20V 4.2A 85mOhm 5nC | |
| IRF1902GTRPBF | MOSFET MOSFT 20V 4.2A 85mOhm 5nC | ||
| IRF150P220XKMA1 | TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P220XKMA1) | ||
| IRF150P221XKMA1 | TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P221XKMA1) | ||
| IRF1503 | 신규 및 오리지널 | ||
| IRF1503L | 신규 및 오리지널 | ||
| IRF1503L/ | 신규 및 오리지널 | ||
| IRF1503PBF,IRF1503 | 신규 및 오리지널 | ||
| IRF1503S | 신규 및 오리지널 | ||
| IRF1503STRPBF | 신규 및 오리지널 | ||
| IRF150A | 신규 및 오리지널 | ||
| IRF150CECC | 신규 및 오리지널 | ||
| IRF150D1 | 신규 및 오리지널 | ||
| IRF150M | 신규 및 오리지널 | ||
| IRF150N | 신규 및 오리지널 | ||
| IRF150NPBF | 신규 및 오리지널 | ||
| IRF151 | Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | ||
| IRF1902 | MOSFET Transistor, N-Channel, SO | ||
| IRF1902TR | 4200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |