IRF610S

IRF610SPBF vs IRF610STRLPBF vs IRF610S

 
PartNumberIRF610SPBFIRF610STRLPBFIRF610S
DescriptionMOSFET N-CH 200V HEXFET MOSFET D2-PAMOSFET N-Chan 200V 3.3 AmpMOSFET RECOMMENDED ALT 844-IRF610SPBF
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEN
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3.3 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation36 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeReelTube
SeriesIRFIRFIRF
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min0.8 S--
Fall Time8.9 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time17 ns--
Factory Pack Quantity100080050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time8.2 ns--
Unit Weight0.050717 oz0.050717 oz0.050717 oz
Height-4.83 mm4.83 mm
Length-10.67 mm10.67 mm
Width-9.65 mm9.65 mm
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
IRF610SPBF MOSFET N-CH 200V HEXFET MOSFET D2-PA
IRF610STRLPBF MOSFET N-Chan 200V 3.3 Amp
IRF610STRRPBF MOSFET N-CH 200V HEXFET MOSFET D2-PA
IRF610STRR MOSFET RECOMMENDED ALT 844-IRF610STRRPBF
IRF610S MOSFET RECOMMENDED ALT 844-IRF610SPBF
Vishay
Vishay
IRF610S MOSFET N-CH 200V 3.3A D2PAK
IRF610STRL MOSFET N-CH 200V 3.3A D2PAK
IRF610STRR MOSFET N-CH 200V 3.3A D2PAK
IRF610SPBF Darlington Transistors MOSFET N-Chan 200V 3.3 Amp
IRF610STRLPBF IGBT Transistors MOSFET N-Chan 200V 3.3 Amp
IRF610STRRPBF IGBT Transistors MOSFET N-Chan 200V 3.3 Amp
IRF610S2497 신규 및 오리지널
IRF610STRPBF 신규 및 오리지널
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