IRF661

IRF6618TRPBF vs IRF6619TR1 vs IRF6619

 
PartNumberIRF6618TRPBFIRF6619TR1IRF6619
DescriptionMOSFET 30V N-CH 2.2mOhm HEXFET 43 nCMOSFET N-CH 20V 30A DIRECTFETMOSFET N-CH 20V 30A DIRECTFET
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-MT--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current170 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge46 nC--
Pd Power Dissipation89 W--
ConfigurationSingle--
PackagingReel--
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel--
Width5.05 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Part # AliasesSP001529242--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6619TR1 MOSFET N-CH 20V 30A DIRECTFET
IRF6619 MOSFET N-CH 20V 30A DIRECTFET
IRF6619TR1PBF MOSFET N-CH 20V 30A DIRECTFET
IRF6618TRPBF MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
IRF6619TRPBF MOSFET N-CH 20V 30A DIRECTFET
Infineon / IR
Infineon / IR
IRF6619TR1PBF MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS
IRF6619TRPBF MOSFET 20V 1 N-CH 1.65mOhm DirectFET 2.0V VGS
IRF6618TRPBF. 신규 및 오리지널
IRF6618TRPBFIRF6618TR1PB 신규 및 오리지널
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