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| PartNumber | IRF6620TR1 | IRF6620 | IRF6620TR |
| Description | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-MX | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 27 A | - | - |
| Rds On Drain Source Resistance | 2.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 28 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 6.6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 80 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | SP001530074 | - | - |
| Unit Weight | 0.035274 oz | - | - |