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| PartNumber | IRF6631TR1PBF | IRF6631TR1 | IRF6631TRPBF |
| Description | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | |
| Manufacturer | Infineon | IOR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | DirectFET-SQ | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 10.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | Reel |
| Height | 0.7 mm | - | - |
| Length | 4.85 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.95 mm | - | - |
| Brand | Infineon / IR | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001529226 | - | - |
| Package Case | - | - | DirectFET-2 |
| Pd Power Dissipation | - | - | 42 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 13 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 8.3 mOhms |
| Qg Gate Charge | - | - | 12 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6631TR1PBF | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | |
| IRF6631TR1 | 신규 및 오리지널 | ||
Infineon Technologies |
IRF6631TR1PBF | MOSFET N-CH 30V 13A DIRECTFET | |
| IRF6631TRPBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ |