 | |  | |
| PartNumber | IRF7807VD2PBF | IRF7807VD1PBF | IRF7807VD1TRPBF. |
| Description | MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC | MOSFET FETKY 30V VBRDSS 25mOhms 9.5nC | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 8.3 A | 8.3 A | - |
| Rds On Drain Source Resistance | 25 mOhms | 25 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 9.5 nC | 9.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | FETKY MOSFET & Schottky Diode | FETKY MOSFET & Schottky Diode | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 2.2 ns | 2.2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 1.2 ns | 1.2 ns | - |
| Factory Pack Quantity | 95 | 95 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 11 ns | 11 ns | - |
| Typical Turn On Delay Time | 6.3 ns | 6.3 ns | - |
| Part # Aliases | SP001575258 | SP001551528 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7807VD2PBF | MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC | |
| IRF7807VD1PBF | MOSFET FETKY 30V VBRDSS 25mOhms 9.5nC | ||
| IRF7807VD1TRPBF. | 신규 및 오리지널 | ||
| IRF7807VD2TRPBF. | 신규 및 오리지널 | ||
Infineon Technologies |
IRF7807VD1PBF | MOSFET N-CH 30V 8.3A 8-SOIC | |
| IRF7807VD2 | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD2PBF | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD2TR | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD1 | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD1TR | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD1TRPBF | MOSFET N-CH 30V 8.3A 8-SOIC | ||
| IRF7807VD2TRPBF | IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC |