| PartNumber | IXBX50N360HV | IXBX75N170 | IXBX25N250 |
| Description | IGBT Transistors 3600V/125A Reverse Conducting IGBT | IGBT Transistors BIMOSFETS 1700V 200A | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-247-PLUS-HV-3 | PLUS 247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Series | Very High Voltage | IXBX75N170 | Very High Voltage |
| Packaging | Tube | Tube | Tube |
| Height | 21.4 mm | 21.34 mm | 21.34 mm |
| Length | 16.2 mm | 16.13 mm | 16.13 mm |
| Width | 5.1 mm | 5.21 mm | 5.21 mm |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.232808 oz | 0.229281 oz | 0.056438 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Tradename | - | BIMOSFET | BIMOSFET |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 2.5 kV |
| Collector Emitter Saturation Voltage | - | - | 3.3 V |
| Maximum Gate Emitter Voltage | - | - | 20 V |
| Continuous Collector Current at 25 C | - | - | 55 A |
| Pd Power Dissipation | - | - | 300 W |
| Continuous Collector Current Ic Max | - | - | 55 A |
| Gate Emitter Leakage Current | - | - | +/- 100 nA |