 | |  | |
| PartNumber | IXTQ36N30P | IXTQ36N20T | IXTQ36N50 |
| Description | MOSFET 36 Amps 300V 0.11 Rds | MOSFET 36 Amps 200V 60 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3P-3 | TO-3P-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 300 V | 200 V | - |
| Id Continuous Drain Current | 36 A | 36 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 60 Ohms | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 20.3 mm | - | - |
| Length | 15.8 mm | - | - |
| Series | IXTQ36N30 | IXTQ36N20 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.9 mm | - | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 97 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Unit Weight | 0.194007 oz | 0.194007 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXTQ36N50P | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | |
| IXTQ36N30P | MOSFET 36 Amps 300V 0.11 Rds | ||
| IXTQ36N20T | MOSFET 36 Amps 200V 60 Rds | ||
| IXTQ36N50 | 신규 및 오리지널 | ||
| IXTQ36N50P TO247 | 신규 및 오리지널 | ||
| IXTQ36N50P | Darlington Transistors MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | ||
| IXTQ36N30P | Darlington Transistors MOSFET 36 Amps 300V 0.11 Rds | ||
| IXTQ36N20T | MOSFET 36 Amps 200V 60 Rds |