 | |  | |
| PartNumber | IXTY1R4N120PHV | IXTY1R4N120P-TRL | IXTY1R4N100P |
| Description | Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET 1.4 Amps 1000V 11 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | Power MOSFET Modules | - |
| Type | Polar | Polar | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Reel | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 29 ns | 29 ns | 28 ns |
| Id Continuous Drain Current | 1.4 A | 1.4 A | 1.4 A |
| Pd Power Dissipation | 86 W | 86 W | 63 W |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| Rds On Drain Source Resistance | 13 Ohms | 13 Ohms | 11 Ohms |
| Rise Time | 27 ns | 27 ns | 35 ns |
| Factory Pack Quantity | 2500 | 2500 | 70 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
| Tradename | Polar | Polar | - |
| Typical Turn Off Delay Time | 78 ns | 78 ns | 65 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
| Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | 1 kV |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 2.38 mm |
| Length | - | - | 6.73 mm |
| Series | - | - | IXTY1R4N100 |
| Transistor Type | - | - | 1 N-Channel |
| Width | - | - | 6.22 mm |
| Unit Weight | - | - | 0.012346 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXTY1R6N50D2-TRL | Discrete Semiconductor Modules Depletion Mode MOSFET | |
| IXTY1R4N120PHV | Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D | ||
| IXTY1R6N100D2-TRL | Discrete Semiconductor Modules Depletion Mode MOSFET | ||
| IXTY1R4N120P-TRL | Discrete Semiconductor Modules Polar Power MOSFET | ||
| IXTY1R6N100D2 | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
| IXTY1R4N100P | MOSFET 1.4 Amps 1000V 11 Rds | ||
| IXTY1R4N120P | MOSFET N-CH 1200V 1.4A TO-252 | ||
| IXTY1R6N50D2 | MOSFET N-CH 500V 1.6A DPAK | ||
| IXTY1R6N100D2-TRL | 신규 및 오리지널 | ||
| IXTY1R6N50D2TRL | 신규 및 오리지널 | ||
| IXTY1R4N120PHV | MOSFET N-CH | ||
| IXTY1R4N60P TRL | MOSFET N-CH 600V 1.4A D-PAK | ||
| IXTY1R6N100D2 | Darlington Transistors MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
| IXTY1R4N60P | Darlington Transistors MOSFET 1.4 Amps 600 V 8 Ohm Rds | ||
| IXTY1R6N50P | IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds | ||
| IXTY1R4N100P | MOSFET 1.4 Amps 1000V 11 Rds |