MJD32C-1

MJD32C-13 vs MJD32C-1 vs MJD32C-1G

 
PartNumberMJD32C-13MJD32C-1MJD32C-1G
DescriptionBipolar Transistors - BJT 100V 3A PNP SMT
ManufacturerDiodes IncorporatedONON/
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleIC Chips
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage1.2 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT3 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD32C--
Height2.4 mm--
Length6.8 mm--
PackagingReel--
Width6.2 mm--
BrandDiodes Incorporated--
Pd Power Dissipation1560 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
MJD32C-13 Bipolar Transistors - BJT 100V 3A PNP SMT
MJD32C-1 신규 및 오리지널
MJD32C-1G 신규 및 오리지널
MJD32C-13 Bipolar Transistors - BJT 100V 3A PNP SMT
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