MPSH10RL stock, MPSH10RL, MPSH10RLRA


PartNumber	MPSH10RLRA	MPSH10RLRPG	MPSH10RLRAG
Description	Bipolar Transistors - BJT 25V VHF/UHF NPN	Bipolar Transistors - BJT 25V VHF/UHF NPN	RF TRANS NPN 25V 650MHZ TO92-3
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors - Bipolar (BJT) - RF
RoHS	N	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	TO-92-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	25 V	25 V	-
Collector Base Voltage VCBO	30 V	30 V	-
Emitter Base Voltage VEBO	3 V	3 V	-
Collector Emitter Saturation Voltage	0.5 V	0.5 V	-
Gain Bandwidth Product fT	650 MHz	650 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Height	5.33 mm (Max)	5.33 mm (Max)	-
Length	5.2 mm (Max)	5.2 mm (Max)	-
Packaging	Reel	Ammo Pack	Tape & Reel (TR)
Width	4.19 mm (Max)	4.19 mm (Max)	-
Brand	ON Semiconductor	ON Semiconductor	-
DC Collector/Base Gain hfe Min	60	60	-
Pd Power Dissipation	350 W	350 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	2000	2000	-
Subcategory	Transistors	Transistors	-
Series	-	MPSH10	-
Package Case	-	-	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type	-	-	Through Hole
Supplier Device Package	-	-	TO-92-3
Power Max	-	-	350mW
Transistor Type	-	-	NPN
Current Collector Ic Max	-	-	-
Voltage Collector Emitter Breakdown Max	-	-	25V
DC Current Gain hFE Min Ic Vce	-	-	60 @ 4mA, 10V
Frequency Transition	-	-	650MHz
Noise Figure dB Typ f	-	-	-
Gain	-	-	-

Search Part Number : "MPSH10RL", Match & Start with "MPSH10RL" - Total : 6

제조사	부분 #	설명
ON Semiconductor	MPSH10RLRA	Bipolar Transistors - BJT 25V VHF/UHF NPN
	MPSH10RLRPG	Bipolar Transistors - BJT 25V VHF/UHF NPN
	MPSH10RLRA	RF TRANS NPN 25V 650MHZ TO92-3
	MPSH10RLRAG	RF TRANS NPN 25V 650MHZ TO92-3
	MPSH10RLRPG	RF TRANS NPN 25V 650MHZ TO92-3
	MPSH10RLRP	신규 및 오리지널

MPSH10RL