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| PartNumber | NP100P04PDG-E1-AY | NP100P04PDG | NP100P04PLG |
| Description | MOSFET LOW VOLTAGE POWER MOSFET | ||
| Manufacturer | Renesas Electronics | NEC | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1800 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 4.45 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 9.15 mm | - | - |
| Brand | Renesas Electronics | - | - |
| Fall Time | 100 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 300 ns | - | - |
| Typical Turn On Delay Time | 38 ns | - | - |
| Unit Weight | 0.077603 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Renesas Electronics |
NP100P04PDG-E1-AY | MOSFET LOW VOLTAGE POWER MOSFET | |
| NP100P04PLG-E1-AY | MOSFET MOSFET | ||
| NP100P04PDG | 신규 및 오리지널 | ||
| NP100P04PDG-E1-AY | Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R | ||
| NP100P04PLG | 신규 및 오리지널 | ||
| NP100P04PLG-E1-AY | MOSFET P-CH 40V 100A TO-263 |