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| PartNumber | NTD5867NLT4G | NTD5867NLT | NTD5867NLT4G 5867 |
| Description | MOSFET NFET DPAK 60V 18A 43 MOHM | ||
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 39 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 36 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 2.4 ns | 2.4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12.6 ns | 12.6 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18.2 ns | - | - |
| Typical Turn On Delay Time | 6.5 ns | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | - | - |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | DPAK-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 36W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 675pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 20A (Tc) | - |
| Rds On Max Id Vgs | - | 39 mOhm @ 10A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 15nC @ 10V | - |
| Pd Power Dissipation | - | 36 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 20 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 39 mOhms | - |
| Qg Gate Charge | - | 15 nC | - |
| Forward Transconductance Min | - | 8 S | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| NTD5867NLT4G | MOSFET NFET DPAK 60V 18A 43 MOHM | ||
| NTD5867NLT | 신규 및 오리지널 | ||
| NTD5867NLT4G 5867 | 신규 및 오리지널 | ||
| NTD5867NLT4G-CUT TAPE | 신규 및 오리지널 | ||
ON Semiconductor |
NTD5867NLT4G | MOSFET N-CH 60V 20A DPAK |