PartNumber | NVD5C464NLT4G | NVD5C464NT4G | NVD5C464N |
Description | MOSFET T6 40V DPAK EXP | MOSFET T6 40V SL DPAK | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | DPAK-3 | DPAK-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Id Continuous Drain Current | - | 59 A | - |
Rds On Drain Source Resistance | - | 4.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 20 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 40 W | - |
Qualification | - | AEC-Q101 | - |
Series | - | NVD5C464N | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 55 S | - |
Fall Time | - | 5 ns | - |
Rise Time | - | 40 ns | - |
Typical Turn Off Delay Time | - | 18 ns | - |
Typical Turn On Delay Time | - | 9 ns | - |