 |  |  | |
| PartNumber | NVMTS001N06CTXG | NVMTS001N06CLTXG | NVMS5P02R3G |
| Description | MOSFET T6 60V SG PQFN8x8 EXPANSI | MOSFET T6 60V LL PQFN8*8 EXPANSI | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | Power-88-8 | PQFN-88-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 376 A | 398.2 A | - |
| Rds On Drain Source Resistance | 910 uOhms | 810 uOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 113 nC | 165 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 5 W, 244 W | 244 W | - |
| Configuration | Single | Single Triple Source Quad Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 160 S | 275 S | - |
| Fall Time | 14.5 ns | 23.3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 21.4 ns | 25.2 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 58.3 ns | 70.7 ns | - |
| Typical Turn On Delay Time | 27.4 ns | 47.2 ns | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| NVMTS0D4N04CTXG | MOSFET AFSM T6 40V SG NCH | ||
| NVMTS0D7N06CLTXG | MOSFET AFSM T6 60V LL NCH | ||
| NVMYS1D3N04CTWG | MOSFET TRENCH 6 40V SL NFET | ||
| NVMTS0D4N04CLTXG | MOSFET AFSM T6 40V LL NCH | ||
| NVMTS0D7N04CTXG | MOSFET AFSM T6 40V SG NCH | ||
| NVMTS0D7N04CLTXG | MOSFET AFSM T6 40V LL NCH | ||
| NVMTS0D6N04CTXG | MOSFET T6 40V SG PQFN8*8 EXPANSI | ||
| NVMTS0D7N06CTXG | MOSFET AFSM T6 60V SG NCH | ||
| NVMTS001N06CTXG | MOSFET T6 60V SG PQFN8x8 EXPANSI | ||
| NVMTS001N06CLTXG | MOSFET T6 60V LL PQFN8*8 EXPANSI | ||
| NVMYS3D5N04CTWG | MOSFET TRENCH 6 40V SL NFET | ||
| NVMTS0D6N04CLTXG | MOSFET T6 40V LL PQFN8*8 EXPANSI | ||
| NVMYS4D6N04CLTWG | MOSFET T6 40V LL LFPAK | ||
| NVMYS2D9N04CLTWG | MOSFET TRENCH 6 40V SL NFET | ||
| NVMYS2D1N04CLTWG | MOSFET Power Mosfet 40V 2.15ohm 139A | ||
| NVMYS4D1N06CLTWG | MOSFET T6 60V LL LFPAK | ||
| NVMYS2D4N04CTWG | MOSFET Power Mosfet 40V 2.4ohm 130A | ||
| NVMYS1D2N04CLTWG | MOSFET T6 40V LL LFPAK | ||
| NVMYS2D2N06CLTWG | MOSFET TRENCH 6 40V SL NFET | ||
| NVMS5P02R3G | 신규 및 오리지널 | ||
| NVMTS001N06CTXG | T6 60V SG PQFN8*8 EXPANSI | ||
| NVMTS0D7N06CTXG | AFSM T6 60V SG NCH | ||
| NVMYS1D2N04CLTWG | T6 40V LL LFPAK | ||
| NVMYS2D1N04CLTWG | MOSFET N-CH 40V 139A | ||
| NVMYS2D2N06CLTWG | TRENCH 6 40V SL NFET | ||
| NVMYS2D4N04CTWG | MOSFET N-CH 40V 130A | ||
| NVMYS2D9N04CLTWG | Power MOSFET | ||
| NVMYS3D5N04CTWG | TRENCH 6 40V SL NFET | ||
| NVMYS4D1N06CLTWG | T6 60V LL LFPAK | ||
| NVMYS4D6N04CLTWG | T6 40V LL LFPAK | ||
ON Semiconductor |
NVMSD6N303R2G | MOSFET N-CH 30V 6A 8SOIC | |
| NVMTS001N06CLTXG | T6 60V LL PQFN8*8 EXPANSI | ||
| NVMTS0D4N04CLTXG | AFSM T6 40V LL NCH | ||
| NVMTS0D4N04CTXG | AFSM T6 40V SG NCH | ||
| NVMTS0D6N04CLTXG | T6 40V LL PQFN8*8 EXPANSI | ||
| NVMTS0D6N04CTXG | T6 40V SG PQFN8*8 EXPANSI | ||
| NVMTS0D7N04CLTXG | AFSM T6 40V LL NCH | ||
| NVMTS0D7N04CTXG | AFSM T6 40V SG NCH | ||
| NVMTS0D7N06CLTXG | AFSM T6 60V LL NCH | ||
| NVMYS1D3N04CTWG | TRENCH 6 40V SL NFET |