 | |  | |
| PartNumber | PSMN4R6-60BS,118 | PSMN4R5-40BS,118 | PSMN4R5-40PS,127 |
| Description | MOSFET Std N-chanMOSFET | MOSFET Std N-chanMOSFET | MOSFET N-CH 40V 4.6 mOhm Standard MOSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | 40 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 4.4 mOhms | 4.5 mOhms | 4.6 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 211 W | 148 W | 148 W |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 800 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.211644 oz |
| Fall Time | - | - | 9 ns |
| Rise Time | - | - | 23 ns |
| Typical Turn Off Delay Time | - | - | 30 ns |
| Typical Turn On Delay Time | - | - | 19 ns |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Nexperia |
PSMN5R2-60YLX | MOSFET PSMN5R2-60YL/LFPAK/REEL 7" Q1/ | |
| PSMN4R8-100BSEJ | MOSFET N-channel 100 V 4.8 mo FET | ||
| PSMN4R6-60BS,118 | MOSFET Std N-chanMOSFET | ||
| PSMN4R5-40PS,127 | MOSFET N-CH 40V 4.6 mOhm Standard MOSFET | ||
| PSMN5R0-80BS,118 | MOSFET Std N-chanMOSFET | ||
| PSMN4R6-60PS,127 | MOSFET N-CH 60V STD LEVEL MOSFET | ||
| PSMN5R0-30YL,115 | MOSFET <=30V N CH TRENCHFET | ||
| PSMN5R3-25MLDX | MOSFET PSMN5R3-25MLD/MLFPAK/REEL 7" Q | ||
| PSMN5R0-100ES,127 | MOSFET N-Ch 100V 5 mOhms | ||
| PSMN5R0-100PS,127 | MOSFET N-Ch 100V 5 mOhms | ||
| PSMN4R8-100PSEQ | MOSFET N-channel 100 V 5 mO std level MOSFET | ||
| PSMN5R0-80PS,127 | MOSFET N-CH 80V 4.7 mOhm Standard MOSFET | ||
| PSMN5R4-25YLDX | MOSFET PSMN5R4-25YLD/LFPAK/REEL 7" Q1 | ||
| PSMN5R2-60YLX | PSMN5R2-60YL/LFPAK/REEL 7" Q1 | ||
| PSMN4R6-60BS,118 | MOSFET N-CH 60V 100A D2PAK | ||
| PSMN4R8-100BSEJ | MOSFET N-CH 100V D2PAK | ||
| PSMN5R0-100PS,127 | MOSFET N-CH 100V 120A TO220AB | ||
| PSMN5R0-30YL,115 | MOSFET N-CH 30V 91A LFPAK | ||
| PSMN5R0-80PS,127 | MOSFET N-CH 80V 100A TO220AB | ||
| PSMN4R6-60PS,127 | IGBT Transistors MOSFET N-CH 60V STD LEVEL MOSFET | ||
| PSMN4R5-40PS,127 | IGBT Transistors MOSFET N-CH 40V 4.6 mOhm Standard MOSFET | ||
| PSMN5R0-100ES,127 | MOSFET N-Ch 100V 5 mOhms | ||
| PSMN5R0-80BS,118 | RF Bipolar Transistors MOSFET Std N-chanMOSFET | ||
| PSMN4R5-40BS,118 | MOSFET N-CH 40V 100A D2PAK | ||
| PSMN4R8-100PSEQ | MOSFET N-CH 100V TO220AB | ||
| PSMN5R3-25MLDX | PSMN5R3-25MLD/MLFPAK/REEL 7 Q | ||
| PSMN5R4-25YLDX | PSMN5R4-25YLD/LFPAK/REEL 7 Q1 | ||
NXP Semiconductors |
PSMN4R6-100XS,127 | MOSFET N-CH 100V 70.4A TO-220F | |
| PSMN5R0-100XS,127 | RF Bipolar Transistors MOSFET N-ch 100V MOSFET | ||
| PSMN4R5-40BS118 | - Bulk (Alt: PSMN4R5-40BS118) | ||
| PSMN4R5-40PS | MOSFET, N CH, 40V, 100A, TO-220 | ||
| PSMN4R5-40PS127 | Now Nexperia PSMN4R5-40PS - Power Field-Effect Transistor, 100A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R6-100XS127 | - Bulk (Alt: PSMN4R6-100XS127) | ||
| PSMN4R6-60BS118 | 신규 및 오리지널 | ||
| PSMN4R6-60PS/BS | 신규 및 오리지널 | ||
| PSMN4R6-60PS127 | Now Nexperia PSMN4R6-60PS - Power Field-Effect Transistor, 100A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R8-100BSE | 신규 및 오리지널 | ||
| PSMN4R8-100BSE118 | 신규 및 오리지널 | ||
| PSMN4R8-100PSE | 신규 및 오리지널 | ||
| PSMN5R0-100PS | 신규 및 오리지널 | ||
| PSMN5R0-100PS127 | Now Nexperia PSMN5R0-100PS - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN5R0-30YL | 신규 및 오리지널 | ||
| PSMN5R0-80PS | MOSFET Transistor, N Channel, 100 A, 80 V, 3.7 mohm, 10 V, 3 V RoHS Compliant: Yes | ||
| PSMN5R0-80PS127 | Now Nexperia PSMN5R0-80PS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN5R080PS | 신규 및 오리지널 | ||
| PSMN5R0-100XS127 | Now Nexperia PSMN5R0-100XS - Power Field-Effect Transistor, 67.5A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R8-100BSEJ-CUT TAPE | 신규 및 오리지널 | ||
| PSMN4R6-60PS | 신규 및 오리지널 | ||
| PSMN5R0-100ES | Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| PSMN5R0-100ES127 | Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |