SEMI X302GAR12E4S신규 및 오리지널
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SEMI X302GB126HDS신규 및 오리지널
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SEMI X302GB126HS신규 및 오리지널
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SEMI X302GB128DIGBT 4 (Trench)
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SEMI X302GB128DS신규 및 오리지널
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SEMI X302GB12E4S신규 및 오리지널
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SEMI X302GB12T4S신규 및 오리지널
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SEMI X302KD16SSEMIX, Trench IGBT Module, 1600V, 300A
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SEMI X302KH16SSEMIX, Trench IGBT Module, 1600V, 300A
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SEMI X302KT16SSEMIX, Trench Rectifier Thyristor Module, 1600V, 300A
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SEMI X303GB12E4신규 및 오리지널
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SEMI X303GB12E4SIGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
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SEMI X303GB12V신규 및 오리지널
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SEMI X303GB12VS신규 및 오리지널
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SEMI X303GD12E4C신규 및 오리지널
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SEMI X303GD12T4C신규 및 오리지널
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SEMI X303GD12VC신규 및 오리지널
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SEMI X341D16SRECTIFIER MODULE, 1.6KV, 340A, SEMIX 13S, No. of Phases:Three Phase, Repetitive Reverse Voltage Vrrm Max:1.6kV, Forward Current If(AV):340A, Bridge Rectifier Case Style:Module, Forward Voltage VF
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SEMI X352GAL128DS신규 및 오리지널
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SEMI X352GAR128DS신규 및 오리지널
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SEMI X352GB128D신규 및 오리지널
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SEMI X352GB128DSIGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
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SEMI X353GB126HDSIGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
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SEMI X353GB126V1신규 및 오리지널
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SEMI X353GB126V3신규 및 오리지널
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SEMI X353GB128DS신규 및 오리지널
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SEMI X353GB176HDS신규 및 오리지널
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SEMI X353GD126HDCSEMIX, Trench IGBT Module, 1200V, 300A
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SEMI X353GD126HDS신규 및 오리지널
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SEMI X402GA066HDS신규 및 오리지널
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SEMI X402GAL066HDSSEMIX, Trench IGBT Module, 600V, 400A
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SEMI X402GB066HDSIGBT MODULE, DUAL, 600V, 530A, Transistor Polarity:Dual NPN, DC Collector Current:530A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
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SEMI X403GB128D신규 및 오리지널
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SEMI X404GB12E4SSEMIX, Trench IGBT Module, 1200V, 400A
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SEMI X452GAR12신규 및 오리지널
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SEMI X452GB126HD신규 및 오리지널
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SEMI X453GB12E4신규 및 오리지널
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SEMI X453GB12E4P신규 및 오리지널
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SEMI X453GB12E4SIGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
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SEMI X453GB12T4SInsulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
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SEMI X453GB12VS신규 및 오리지널
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SEMI X453GB176HDSIGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage
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SEMI X453GD12VC신규 및 오리지널
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SEMI X501D17FSSEMIX, Trench IGBT Module, 1700V, 800A
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SEMI X503GB126HDSIGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC
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SEMI X503GB126V3신규 및 오리지널
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SEMI X553GB128DS신규 및 오리지널
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SEMI X603GAR066HDSSEMIX, Trench IGBT Module, 600V, 800A
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SEMI X402GB066HD신규 및 오리지널
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SEMI X553GB128D신규 및 오리지널
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