SGP1

SGP10N60RUFDTU vs SGP13N60UFTU vs SGP10N60AXKSA1

 
PartNumberSGP10N60RUFDTUSGP13N60UFTUSGP10N60AXKSA1
DescriptionIGBT Transistors Dis Short Circuit Rated IGBTIGBT Transistors Dis High Perf IGBTIGBT 600V 20A 92W TO220-3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.2 V2.1 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C16 A13 A-
Pd Power Dissipation75 W60 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSGP10N60RUFD--
PackagingTubeTube-
Continuous Collector Current Ic Max16 A13 A-
Height9.4 mm9.4 mm-
Length10.1 mm10.1 mm-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current16 A13 A-
Gate Emitter Leakage Current+/- 100 nA+/- 100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Part # AliasesSGP10N60RUFDTU_NL--
Unit Weight0.063493 oz0.211644 oz-
제조사 부분 # 설명 RFQ
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