SI442

SI4425BDY-T1-E3 vs SI4423DY-T1-E3 vs SI4423DY-T1-GE3

 
PartNumberSI4425BDY-T1-E3SI4423DY-T1-E3SI4423DY-T1-GE3
DescriptionMOSFET 30V 11A 2.5WMOSFET 20 Volt 14 Amp 3.0WMOSFET 20V 14A 3.0W 7.5mohm @ 4.5V
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Id Continuous Drain Current11.4 A--
Rds On Drain Source Resistance12 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge64 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesSI4SI4SI4
Transistor Type1 P-Channel--
Width3.9 mm3.9 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min29 S--
Fall Time53 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time13 ns--
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesSI4425BDY-T1SI4423DY-T1SI4423DY-GE3
Unit Weight0.006596 oz0.017870 oz0.017870 oz
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4425BDY-T1-E3 MOSFET 30V 11A 2.5W
SI4423DY-T1-E3 MOSFET 20 Volt 14 Amp 3.0W
SI4425DDY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4426DY-T1-E3 MOSFET SOIC8 20V N-CH 2.5V
SI4427BDY-T1-E3 MOSFET 30V 13.3A 3W
SI4427BDY-T1-GE3 MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4425BDY-T1-GE3 MOSFET 30V 11.4A 2.5W 12mohm @ 10V
SI4425FDY-T1-GE3 MOSFET P-Channel 30 V (D-S) MOSFET
SI4423DY-T1-GE3 MOSFET 20V 14A 3.0W 7.5mohm @ 4.5V
SI4426DY-T1-GE3 MOSFET 20V 8.5A 2.5W 25mohm @ 4.5V
Vishay
Vishay
SI4426DY-T1-E3 RF Bipolar Transistors MOSFET 20V 8.5A 2.5W
SI4423DY-T1-GE3 RF Bipolar Transistors MOSFET 20V 14A 3.0W 7.5mohm @ 4.5V
SI4427BDY-T1-GE3 RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4426DY-T1-GE3 RF Bipolar Transistors MOSFET 20V 8.5A 2.5W 25mohm @ 4.5V
SI4425BDY-T1-GE3 RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V
SI4425BDY-T1-E3 MOSFET P-CH 30V 8.8A 8-SOIC
SI4425DDY-T1-GE3 MOSFET P-CH 30V 19.7A 8-SOIC
SI4427BDY-T1-E3 MOSFET P-CH 30V 9.7A 8-SOIC
SI4423DY-T1-E3 MOSFET P-CH 20V 10A 8-SOIC
SI4425BDY-T1-E3-CUT TAPE 신규 및 오리지널
SI4425DDY-T1-GE3-CUT TAPE 신규 및 오리지널
SI4427BDY-T1-E3-CUT TAPE 신규 및 오리지널
SI4423DY 신규 및 오리지널
SI4423DY-T1 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
SI4425 신규 및 오리지널
SI4425B 신규 및 오리지널
SI4425BD , HZU18BTR 신규 및 오리지널
SI4425BDY 신규 및 오리지널
SI4425BDY-1 신규 및 오리지널
SI4425BDY-T1 신규 및 오리지널
SI4425BDY-T1 E3 신규 및 오리지널
SI4425BDY-T1-E3. FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO
SI4425DDY 신규 및 오리지널
SI4425DY Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI4425DY(4425) 신규 및 오리지널
SI4425DY- T1-E3 신규 및 오리지널
SI4425DY-1 신규 및 오리지널
SI4425DY-NL 신규 및 오리지널
SI4425DY-T1 MOSFET 30V 11A 2.5W
SI4425DY-T1-E3 신규 및 오리지널
SI4425DY-T1-E3. 신규 및 오리지널
SI4425DY-T1-GE3 신규 및 오리지널
SI4425DYT1 신규 및 오리지널
SI4425DYT1E3 신규 및 오리지널
SI4426DY MOSFET RECOMMENDED ALT 781-SI4426DY-T1-E3
SI4426DY-T1 MOSFET RECOMMENDED ALT 781-SI4426DY-T1-E3
SI4426DY-T1-E3 GE3 신규 및 오리지널
SI4427BDY 신규 및 오리지널
SI4427DY 신규 및 오리지널
SI4427DY-T1 신규 및 오리지널
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