PartNumber | SI4425BDY-T1-E3 | SI4423DY-T1-E3 | SI4423DY-T1-GE3 |
Description | MOSFET 30V 11A 2.5W | MOSFET 20 Volt 14 Amp 3.0W | MOSFET 20V 14A 3.0W 7.5mohm @ 4.5V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Id Continuous Drain Current | 11.4 A | - | - |
Rds On Drain Source Resistance | 12 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 64 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | SI4 | SI4 | SI4 |
Transistor Type | 1 P-Channel | - | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 29 S | - | - |
Fall Time | 53 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 100 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | SI4425BDY-T1 | SI4423DY-T1 | SI4423DY-GE3 |
Unit Weight | 0.006596 oz | 0.017870 oz | 0.017870 oz |
제조사 | 부분 # | 설명 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SI4425BDY-T1-E3 | MOSFET 30V 11A 2.5W | |
SI4423DY-T1-E3 | MOSFET 20 Volt 14 Amp 3.0W | ||
SI4425DDY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
SI4426DY-T1-E3 | MOSFET SOIC8 20V N-CH 2.5V | ||
SI4427BDY-T1-E3 | MOSFET 30V 13.3A 3W | ||
SI4427BDY-T1-GE3 | MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V | ||
SI4425BDY-T1-GE3 | MOSFET 30V 11.4A 2.5W 12mohm @ 10V | ||
SI4425FDY-T1-GE3 | MOSFET P-Channel 30 V (D-S) MOSFET | ||
SI4423DY-T1-GE3 | MOSFET 20V 14A 3.0W 7.5mohm @ 4.5V | ||
SI4426DY-T1-GE3 | MOSFET 20V 8.5A 2.5W 25mohm @ 4.5V | ||
Vishay |
SI4426DY-T1-E3 | RF Bipolar Transistors MOSFET 20V 8.5A 2.5W | |
SI4423DY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 14A 3.0W 7.5mohm @ 4.5V | ||
SI4427BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V | ||
SI4426DY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 8.5A 2.5W 25mohm @ 4.5V | ||
SI4425BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V | ||
SI4425BDY-T1-E3 | MOSFET P-CH 30V 8.8A 8-SOIC | ||
SI4425DDY-T1-GE3 | MOSFET P-CH 30V 19.7A 8-SOIC | ||
SI4427BDY-T1-E3 | MOSFET P-CH 30V 9.7A 8-SOIC | ||
SI4423DY-T1-E3 | MOSFET P-CH 20V 10A 8-SOIC | ||
SI4425BDY-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
SI4425DDY-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
SI4427BDY-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
SI4423DY | 신규 및 오리지널 | ||
SI4423DY-T1 | 10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA | ||
SI4425 | 신규 및 오리지널 | ||
SI4425B | 신규 및 오리지널 | ||
SI4425BD , HZU18BTR | 신규 및 오리지널 | ||
SI4425BDY | 신규 및 오리지널 | ||
SI4425BDY-1 | 신규 및 오리지널 | ||
SI4425BDY-T1 | 신규 및 오리지널 | ||
SI4425BDY-T1 E3 | 신규 및 오리지널 | ||
SI4425BDY-T1-E3. | FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO | ||
SI4425DDY | 신규 및 오리지널 | ||
SI4425DY | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
SI4425DY(4425) | 신규 및 오리지널 | ||
SI4425DY- T1-E3 | 신규 및 오리지널 | ||
SI4425DY-1 | 신규 및 오리지널 | ||
SI4425DY-NL | 신규 및 오리지널 | ||
SI4425DY-T1 | MOSFET 30V 11A 2.5W | ||
SI4425DY-T1-E3 | 신규 및 오리지널 | ||
SI4425DY-T1-E3. | 신규 및 오리지널 | ||
SI4425DY-T1-GE3 | 신규 및 오리지널 | ||
SI4425DYT1 | 신규 및 오리지널 | ||
SI4425DYT1E3 | 신규 및 오리지널 | ||
SI4426DY | MOSFET RECOMMENDED ALT 781-SI4426DY-T1-E3 | ||
SI4426DY-T1 | MOSFET RECOMMENDED ALT 781-SI4426DY-T1-E3 | ||
SI4426DY-T1-E3 GE3 | 신규 및 오리지널 | ||
SI4427BDY | 신규 및 오리지널 | ||
SI4427DY | 신규 및 오리지널 | ||
SI4427DY-T1 | 신규 및 오리지널 |