SI71

SI7119DN-T1-GE3 vs SI7119DN-T1-E3 vs SI7117DN-T1-GE3

 
PartNumberSI7119DN-T1-GE3SI7119DN-T1-E3SI7117DN-T1-GE3
DescriptionMOSFET -200V Vds 20V Vgs PowerPAK 1212-8MOSFET -200V Vds 20V Vgs PowerPAK 1212-8MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.05 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16.2 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
Height1.04 mm1.04 mm-
Length3.3 mm3.3 mm-
SeriesSI7SI7SI7
Transistor Type1 P-Channel--
Width3.3 mm3.3 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min4 S--
Fall Time12 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns--
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesSI7119DN-GE3SI7119DN-E3SI7117DN-GE3
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
SI7121ADN-T1-GE3 MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
SI7119DN-T1-E3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
SI7117DN-T1-GE3 MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
SI7121DN-T1-GE3 MOSFET 30V 16A 52W 1.8mohm @ 10V
SI7129DN-T1-GE3 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
SI7120DN-T1-GE3 MOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3
SI7120DN-T1-E3 MOSFET RECOMMENDED ALT 78-SI7120ADN-T1-GE3
SI7123DN-T1-GE3 MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3
Vishay
Vishay
SI7120DN-T1-E3 IGBT Transistors MOSFET 60V 10A 0.019Ohm
SI7120DN-T1-GE3 IGBT Transistors MOSFET 60V 10A 3.8W 19mohm @ 10V
SI7117DN-T1-GE3 RF Bipolar Transistors MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V
SI7117DN-T1-E3 MOSFET P-CH 150V 2.17A 1212-8
SI7119DN-T1-E3 MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-GE3 MOSFET P-CH 200V 3.8A 1212-8
SI7120ADN-T1-GE3 MOSFET N-CH 60V 6A 1212-8 PPAK
SI7121ADN-T1-GE3 MOSFET P-CH 30V D-S PPAK 1212-8
SI7121DN-T1-GE3 MOSFET P-CH 30V 16A 1212-8
SI7123DN-T1-GE3 MOSFET P-CH 20V 10.2A 1212-8
SI7129DN-T1-GE3 MOSFET P-CH 30V 35A 1212-8
SI7119DN-T1-GE3-CUT TAPE 신규 및 오리지널
SI7120ADN-T1-GE3-CUT TAPE 신규 및 오리지널
SI7121ADN-T1-GE3-CUT TAPE 신규 및 오리지널
SI7121DN-T1-GE3-CUT TAPE 신규 및 오리지널
SI7123DN-T1-GE3-CUT TAPE 신규 및 오리지널
SI7119DN 신규 및 오리지널
SI7119DN-T1-GE3-D 신규 및 오리지널
SI7120 신규 및 오리지널
SI7120ADN 신규 및 오리지널
SI7120DN 신규 및 오리지널
SI7120DN-T1-E3 GE3 신규 및 오리지널
SI7120DN-T1-E3CT 신규 및 오리지널
SI7121D 신규 및 오리지널
SI7121DN 신규 및 오리지널
SI7121DN-T1 신규 및 오리지널
SI7121DN-T1-G3 신규 및 오리지널
SI7121DN-T1-GE3. Transistor Polarity:P Channel, Continuous Drain Current Id:-16A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.015ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Di
SI7121DN-TI-GE3 신규 및 오리지널
SI7123DN 신규 및 오리지널
SI7123DN-T1-GE3TR 신규 및 오리지널
SI7124DP-E3 신규 및 오리지널
SI7129DN 신규 및 오리지널
SI7129DN-T1-GE3 PB-FREE 신규 및 오리지널
SI7121DN-T1-E3 신규 및 오리지널
SI7129 신규 및 오리지널
SI7129DN-T1 신규 및 오리지널
SI7133 신규 및 오리지널
SI7133DN 신규 및 오리지널
SI7133HPR 신규 및 오리지널
SI7133MPR 신규 및 오리지널
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