 | | | |
| PartNumber | SI7116DN-T1-GE3 | SI7117DN-T1-E3 | SI7116DN-T1-E3 |
| Description | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SI7 | SI7 | SI7 |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI7116DN-GE3 | SI7117DN-E3 | SI7116DN-E3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Id Continuous Drain Current | - | - | 16.4 A |
| Rds On Drain Source Resistance | - | - | 7.8 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 1.5 V |
| Vgs Gate Source Voltage | - | - | 10 V |
| Qg Gate Charge | - | - | 15 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 3.8 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 68 S |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 10 ns |
| Typical Turn Off Delay Time | - | - | 36 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7119DN-T1-GE3 | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 | |
| SI7116DN-T1-GE3 | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | ||
| SI7119DN-T1-E3 | MOSFET -200V Vds 20V Vgs PowerPAK 1212-8 | ||
| SI7117DN-T1-E3 | MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 | ||
| SI7117DN-T1-GE3 | MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 | ||
| SI7116DN-T1-E3 | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | ||
Vishay |
SI7117DN-T1-GE3 | RF Bipolar Transistors MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V | |
| SI7116DN-T1-E3 | MOSFET N-CH 40V 10.5A 1212-8 | ||
| SI7116DN-T1-GE3 | MOSFET N-CH 40V 10.5A 1212-8 | ||
| SI7117DN-T1-E3 | MOSFET P-CH 150V 2.17A 1212-8 | ||
| SI7119DN-T1-E3 | MOSFET P-CH 200V 3.8A 1212-8 | ||
| SI7119DN-T1-GE3 | MOSFET P-CH 200V 3.8A 1212-8 | ||
| SI7116DN-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI7119DN-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI7116 | 신규 및 오리지널 | ||
| SI7116DN | 신규 및 오리지널 | ||
| SI7116DN-T1-GE3 7116 | 신규 및 오리지널 | ||
| SI7117DN | 신규 및 오리지널 | ||
| SI7119DN | 신규 및 오리지널 | ||
| SI7119DN-T1-GE3-D | 신규 및 오리지널 |