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| PartNumber | SI7120ADN-T1-GE3-CUT TAPE | SI7120ADN | SI7120ADN-T1-GE3 |
| Description | MOSFET N-CH 60V 6A 1212-8 PPAK | ||
| Manufacturer | - | - | VISHAY |
| Product Category | - | - | FETs - Single |
| Series | - | - | SI7120ADN |
| Packaging | - | - | Reel |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | TrenchFET |
| Package Case | - | - | PowerPAK-1212-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.8 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 9.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
| Rds On Drain Source Resistance | - | - | 21 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 50 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Qg Gate Charge | - | - | 30 nC |
| Forward Transconductance Min | - | - | 35 S |
| Channel Mode | - | - | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
| SI7120ADN-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI7120ADN | 신규 및 오리지널 | ||
Vishay |
SI7120ADN-T1-GE3 | MOSFET N-CH 60V 6A 1212-8 PPAK |