SI715

SI7155DP-T1-GE3 vs SI7153DN-T1-GE3 vs SI7156DP-T1-E3

 
PartNumberSI7155DP-T1-GE3SI7153DN-T1-GE3SI7156DP-T1-E3
DescriptionMOSFET -40V Vds 20V Vgs PowerPAK SO-8MOSFET P-CH 30V 18A POWERPAK1212MOSFET N-CH 40V 50A PPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4.6 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge220 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Fall Time117 ns--
Product TypeMOSFET--
Rise Time185 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time55 ns--
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7155DP-T1-GE3 MOSFET -40V Vds 20V Vgs PowerPAK SO-8
SI7157DP-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK SO-8
SI7159DP-T1-GE3 MOSFET 30V 30A 83W 7.0mohm @ 10V
Vishay
Vishay
SI7159DP-T1-GE3 RF Bipolar Transistors MOSFET 30V 30A 83W 7.0mohm @ 10V
SI7153DN-T1-GE3 MOSFET P-CH 30V 18A POWERPAK1212
SI7156DP-T1-E3 MOSFET N-CH 40V 50A PPAK SO-8
SI7157DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8
SI7155DP-T1-GE3 MOSFET P-CHAN 40V POWERPAK SO-8
SI7156DP-T1-GE3 MOSFET N-CH 40V 50A PPAK SO-8
SI7154DP-T1-E3 신규 및 오리지널
SI7157DP-T1-GE3DKR 신규 및 오리지널
SI7159DP-T1-E3 신규 및 오리지널
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