SI7164

SI7164DP-T1-GE3 vs SI7164DP vs SI7164DP-T1-E3

 
PartNumberSI7164DP-T1-GE3SI7164DPSI7164DP-T1-E3
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance6.25 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge49.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI7--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min30 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time21 ns--
Part # AliasesSI7164DP-GE3--
Unit Weight0.017870 oz--
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7164DP-T1-GE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SI7164DP-T1-GE3-CUT TAPE 신규 및 오리지널
SI7164DP 신규 및 오리지널
SI7164DP-T1-E3 신규 및 오리지널
Vishay
Vishay
SI7164DP-T1-GE3 MOSFET N-CH 60V 60A PPAK SO-8
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