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| PartNumber | SIHP050N60E-GE3 | SIHLZ34S-GE3 | SIHLR120-GE3 |
| Description | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 60V Vds 10V Vgs D2PAK (TO-263) | MOSFET 100V Vds 10V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | TO-220AB-3 | TO-263-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 60 V | 100 V |
| Id Continuous Drain Current | 51 A | 30 A | 7.7 A |
| Rds On Drain Source Resistance | 50 mOhms | 50 mOhms | 270 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 30 V | 10 V | 10 V |
| Qg Gate Charge | 130 nC | 35 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 278 W | 3.7 W | 42 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | E | - | SIH |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 12 S | 12 S | 4.4 S |
| Fall Time | 48 ns | 56 ns | 27 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 82 ns | 170 ns | 64 ns |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 67 ns | 30 ns | 21 ns |
| Typical Turn On Delay Time | 35 ns | 14 ns | 9.8 ns |
| Factory Pack Quantity | - | 1 | 1 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP100N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | |
| SIHP050N60E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
| SIHP065N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP11N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | ||
| SIHP12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP12N50C-E3 | MOSFET N-Channel 500V | ||
| SIHP12N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP10N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
| SIHP125N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHP120N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | ||
| SIHP105N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHP12N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHLZ34S-GE3 | MOSFET 60V Vds 10V Vgs D2PAK (TO-263) | ||
| SIHLR120-GE3 | MOSFET 100V Vds 10V Vgs DPAK (TO-252) | ||
| SIHP10N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP10N40D-GE3 | IGBT Transistors MOSFET 450V 600mOhms@10V 10A N-Ch D-SRS | |
| SIHP12N60E-GE3 | IGBT Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | ||
| SIHP12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHP11N80E-GE3 | MOSFET N-CH 800V 12A TO220AB | ||
| SIHP065N60E-GE3 | MOSFET N-CH 600V 40A TO220AB | ||
| SIHP10N40D-E3 | MOSFET N-CH 400V 10A TO-220AB | ||
| SIHP12N50C-E3 | MOSFET N-CH 500V 12A TO-220AB | ||
| SIHP12N60E-E3 | MOSFET N-CH 600V 12A TO220AB | ||
| SIHP050N60E-GE3 | E Series Power MOSFET TO220AB, 50 m @ 10V | ||
| SIHP100N60E-GE3 | E Series Power MOSFET TO-220AB, 100 m @ 10V | ||
| SIHP120N60E-GE3 | E Series Power MOSFET TO-220AB, 120 m @ 10V | ||
| SIHLR110PBF | 신규 및 오리지널 | ||
| SIHLR110TL-E3 | 신규 및 오리지널 | ||
| SIHLR120TL-E3 | 신규 및 오리지널 | ||
| SIHLU014-GE3 | 신규 및 오리지널 | ||
| SIHLU014GE3 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | ||
| SIHLU110 | 신규 및 오리지널 | ||
| SIHLZ14 | 신규 및 오리지널 | ||
| SIHLZ14S | 신규 및 오리지널 | ||
| SIHLZ24S | 신규 및 오리지널 | ||
| SIHLZ24S-GE3 | 신규 및 오리지널 | ||
| SIHLZ34 | 신규 및 오리지널 | ||
| SIHNK60 | 신규 및 오리지널 | ||
| SIHOJ642B2S320B | 신규 및 오리지널 | ||
| SIHOJ646B2B3100 | 신규 및 오리지널 | ||
| SIHP10N40D | 신규 및 오리지널 | ||
| SIHP11N80E | 신규 및 오리지널 | ||
| SIHP1260EGE3 | 신규 및 오리지널 | ||
| SIHP12N50 | 신규 및 오리지널 | ||
| SIHP12N50C | 신규 및 오리지널 | ||
| SIHP12N50C-E3,P12N50C | 신규 및 오리지널 | ||
| SIHP12N50CE3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP12N60E | 신규 및 오리지널 | ||
| SIHP12N65E | 신규 및 오리지널 | ||
| SIHM44-6R8 | 신규 및 오리지널 |