PartNumber | SIHP22N60AEL-GE3 | SIHP22N60AE-GE3 | SIHP22N60E-E3 |
Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 21 A | 20 A | 21 A |
Rds On Drain Source Resistance | 180 mOhms | 156 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 41 nC | 48 nC | 57 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 179 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | EL | SIH | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 16 S | - | - |
Fall Time | 28 ns | 21 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 33 ns | 27 ns |
Factory Pack Quantity | 1 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 86 ns | 45 ns | 66 ns |
Typical Turn On Delay Time | 27 ns | 19 ns | 18 ns |
Packaging | - | Tube | Tube |
Height | - | 15.49 mm | - |
Length | - | 10.41 mm | - |
Width | - | 4.7 mm | - |
Unit Weight | - | 0.063493 oz | 0.211644 oz |
제조사 | 부분 # | 설명 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHP22N60EF-GE3 | MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode | |
SIHP240N60E-GE3 | MOSFET 600V Vds; +/-30V Vgs TO-220AB | ||
SIHP30N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP22N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP22N60AE-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP25N60EFL-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP25N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
SIHP22N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP22N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP25N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
SIHP24N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP28N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP23N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP24N65E-E3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP22N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP28N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP24N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP22N60EL-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP28N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP25N40D-GE3 | Darlington Transistors MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS | |
SIHP24N65E-GE3 | IGBT Transistors MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS | ||
SIHP28N60EF-GE3 | IGBT Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET | ||
SIHP28N65E-GE3 | RF Bipolar Transistors MOSFET 700V 122mOhms@10V 28A N-Channel | ||
SIHP22N65E-GE3 | RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS | ||
SIHP24N65EF-GE3 | RF Bipolar Transistors MOSFET 650V 156mOhms@10V 24A N-Ch EF-SRS | ||
SIHP23N60E-GE3 | RF Bipolar Transistors MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS | ||
SIHP22N60AEL-GE3 | MOSFET N-CHAN 600V | ||
SIHP240N60E-GE3 | MOSFET N-CHAN 600V TO-220AB | ||
SIHP25N50E-GE3 | MOSFET N-CH 500V 26A TO-220AB | ||
SIHP30N60AEL-GE3 | MOSFET N-CHAN 600V TO-220AB | ||
SIHP22N60E-E3 | MOSFET N-CH 600V 21A TO220AB | ||
SIHP22N60E-GE3 | MOSFET N-CH 600V 21A TO220AB | ||
SIHP24N65E-E3 | MOSFET N-CH 650V 24A TO220AB | ||
SIHP28N65EF-GE3 | MOSFET N-CH 650V 28A TO-220AB | ||
SIHP22N60AE-GE3 | MOSFET N-CH 600V 20A TO220AB | ||
SIHP22N60EL-GE3 | MOSFET N-CH 600V 21A TO220AB | ||
SIHP25N40D-E3 | Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB | ||
SIHP25N60EFL-GE3 | Power MOSFET with Fast Body Diode and Low Gate Charge | ||
SIHP22N60S-E3 | IGBT Transistors MOSFET 600V N-Channel Superjunction TO-220 | ||
SIHP22N60E | 신규 및 오리지널 | ||
SIHP22N60E-E3 P22N60E | 신규 및 오리지널 | ||
SIHP22N60E-E3,SIHP22N60S | 신규 및 오리지널 | ||
SIHP22N60EE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP22N60EGE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP22N60S | 신규 및 오리지널 | ||
SIHP22N60S-E3/45 | 신규 및 오리지널 | ||
SIHP25N40D | 신규 및 오리지널 | ||
SIHP25N40DGE3 | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP25N50EGE3 | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP22N60EF-GE3 | MOSFET N-CHAN 600V TO-220AB |