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| PartNumber | SIR616DP-T1-GE3 | SIR610DP-T1-RE3 | SIR618DP-T1-GE3 |
| Description | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 20.2 A | 35.4 A | 14.2 A |
| Rds On Drain Source Resistance | 42 mOhms | 23.9 mOhms | 76 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 36 nC | 38 nC | 21.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 104 W | 48 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | ThunderFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 35 S | 27 S | 18 S |
| Fall Time | 8 ns | 24 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 20 ns | 17 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 20 ns | 14 ns |
| Typical Turn On Delay Time | 10 ns | 9 ns | 8 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR616DP-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | |
| SIR610DP-T1-RE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
| SIR618DP-T1-GE3 | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIR618DP-T1-GE3 | MOSFET N-CH 200V 14.2A SO-8 | |
| SIR616DP-T1-GE3 | MOSFET N-CH 200V 20.2A SO-8 | ||
| SIR610DP-T1-RE3 | N-Channel 200 V (D-S) MOSFET | ||
| SIR610DP-T1-E3 | 신규 및 오리지널 | ||
| SIR610DP-T1-GE3 | 신규 및 오리지널 |