SIR626

SIR626DP-T1-RE3 vs SIR626LDP-T1-RE3 vs SIR626DP

 
PartNumberSIR626DP-T1-RE3SIR626LDP-T1-RE3SIR626DP
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8MOSFET 60V Vds; 20V Vgs PowerPAK SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current100 A186 A-
Rds On Drain Source Resistance1.4 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge102 nC135 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min78 S140 S-
Fall Time12 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns64 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns45 ns-
Typical Turn On Delay Time19 ns17 ns-
Unit Weight0.017870 oz--
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR626DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR626LDP-T1-RE3 MOSFET 60V Vds; 20V Vgs PowerPAK SO-8
SIR626DP 신규 및 오리지널
Vishay
Vishay
SIR626DP-T1-RE3 MOSFET N-CH 60V 100A POWERPAKSO
SIR626LDP-T1-RE3 N-Channel 60-V (D-S) MOSFET PowerPAK SO-8 250M SG 2 mil , 1.5 m @ 10V m @ 7.5V 2.1 m @ 4.5V
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