 | | |
| PartNumber | SIR680DP-T1-RE3 | SIR688DP-T1-GE3 |
| Description | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 60 V |
| Id Continuous Drain Current | 100 A | 60 A |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 105 nC | 66 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 104 W | 83 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Series | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 75 S | 70 S |
| Fall Time | 12 ns | 8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | 8 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 31 ns |
| Typical Turn On Delay Time | 19 ns | 15 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| Height | - | 1.04 mm |
| Length | - | 6.15 mm |
| Width | - | 5.15 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR680DP-T1-RE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | |
| SIR688DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIR680DP-T1-RE3 | MOSFET N-CH 80V 100A POWERPAKSO | |
| SIR688DP-T1-GE3 | MOSFET N-CH 60V 60A PPAK SO-8 | ||
| SIR688DP | 신규 및 오리지널 |