SQ23

SQ2325ES-T1_GE3 vs SQ2319ADS-T1_GE3 vs SQ2337ES-T1-GE3

 
PartNumberSQ2325ES-T1_GE3SQ2319ADS-T1_GE3SQ2337ES-T1-GE3
DescriptionMOSFET P-Chnl 150-V (D-S) AEC-Q101 QualifiedMOSFET P Ch -40Vds 20Vgs AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage150 V40 V-
Id Continuous Drain Current840 mA4.6 A-
Rds On Drain Source Resistance1.3 Ohms75 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V1.5 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge10 nC10.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation3 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min2.2 S8 S-
Fall Time10 ns17 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time14 ns18 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns17 ns-
Typical Turn On Delay Time8 ns4 ns-
Unit Weight0.001482 oz0.000282 oz-
Height-1.45 mm-
Length-2.9 mm-
Width-1.6 mm-
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ2364EES-T1_GE3 MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
SQ2362ES-T1_GE3 MOSFET N-Channel 60V AEC-Q101 Qualified
SQ2325ES-T1_GE3 MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified
SQ2361ES-T1_GE3 MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
SQ2319ADS-T1_GE3 MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
SQ2337ES-T1_GE3 MOSFET P-Channel 80V AEC-Q101 Qualified
SQ2348ES-T1_GE3 MOSFET 30V 8A 3W AEC-Q101 Qualified
SQ2351ES-T1_GE3 MOSFET P-Channel 20V AEC-Q101 Qualified
SQ2361EES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2361AEES-T1_GE3
SQ2337ES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2337ES-T1_GE3
SQ2351ES-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ2351ES-T1_GE3
SQ2351ES-T1-GE3 IGBT Transistors MOSFET P-Channel 20V Automotive MOSFET
SQ2337ES-T1-GE3 IGBT Transistors MOSFET P-Channel 80V Automotive MOSFET
SQ2351ES-T1_GE3-CUT TAPE 신규 및 오리지널
SQ2361ES-T1_GE3-CUT TAPE 신규 및 오리지널
SQ2362ES-T1_GE3-CUT TAPE 신규 및 오리지널
SQ2319AES-T1-E3 신규 및 오리지널
SQ2319ES 신규 및 오리지널
SQ2319EST1GE3 Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
SQ2325ES-T1-GE3 P-CHANNEL 150-V (D-S) 175C MOS
SQ2328ES-T1-GE3 MOSFET N-Channel 100V Automotive MOSFET
SQ2337ES 신규 및 오리지널
SQ2348ES 신규 및 오리지널
SQ2348ES-T1 신규 및 오리지널
SQ2348ES-T1-GE3 Trans MOSFET N-CH 30V 8A Automotive 3-Pin SOT-23 T/R
SQ2351ES-T1-GE3 (VISHAY) 신규 및 오리지널
SQ2351ES-TI-GE3 신규 및 오리지널
SQ2360EES-T1-E3 신규 및 오리지널
SQ2361/2309 신규 및 오리지널
SQ2361AEES-T1-GE3 MOSFET P-CHANNEL 60-V (D-S)
SQ2361EES 신규 및 오리지널
SQ2361EES-T1-E3 신규 및 오리지널
SQ2361EES-T1_GE3 신규 및 오리지널
SQ2361ES 신규 및 오리지널
SQ2361ES-T1-GE3 MOSFET P-CHANNEL 60-V (D-S)
SQ2361ES-T1_GE3/V 신규 및 오리지널
SQ2362ES-T1-GE3 MOSFET N-CHANNEL 60V
SQ2362ES-TI-GE3 신규 및 오리지널
SQ2389ES-T1 신규 및 오리지널
Vishay
Vishay
SQ2337ES-T1_GE3 MOSFET P-CHAN 80V SOT23
SQ2361AEES-T1_GE3 MOSFET P-CH 60V 2.5A SSOT23
SQ2319ADS-T1_GE3 MOSFET P-CH 40V 4.6A SOT23-3
SQ2319ES-T1-GE3 MOSFET P-CH 40V 4.6A TO-236
SQ2348ES-T1_GE3 MOSFET N-CH 30V 8A SOT-23
SQ2351ES-T1_GE3 MOSFET P-CHAN 20V SOT23
SQ2360EES-T1-GE3 MOSFET N-CH 60V 4.4A TO236
SQ2361EES-T1-GE3 MOSFET P-CH 60V 2.5A SOT23
SQ2361ES-T1_GE3 MOSFET P-CH 60V 2.5A SSOT23
SQ2362ES-T1_GE3 MOSFET N-CH 60V 4.4A TO236
SQ2319ES-T1 신규 및 오리지널
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