SQD1

SQD100N03-3M4_GE3 vs SQD100N03-3M2L_GE3 vs SQD100N04-3M6-GE3

 
PartNumberSQD100N03-3M4_GE3SQD100N03-3M2L_GE3SQD100N04-3M6-GE3
DescriptionMOSFET 30V 100A 136W N-Channel MOSFETMOSFET 30V 100A 136W N-Channel MOSFETMOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance2.8 mOhms2.7 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge124 nC116 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W136 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min108 S122 S-
Fall Time10 ns10 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns10 ns-
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time37 ns42 ns-
Typical Turn On Delay Time13 ns10 ns-
Unit Weight0.050717 oz0.050717 oz-
Height-2.38 mm-
Length-6.73 mm-
Width-6.22 mm-
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD19P06-60L_T4GE3 MOSFET -60V Vds TO-252 AEC-Q101 Qualified
SQD10N30-330H_GE3 MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
SQD19P06-60L_GE3 MOSFET 60V 20A 46W AEC-Q101 Qualified
SQD15N06-42L_GE3 MOSFET 60V 15A 37W AEC-Q101 Qualified
SQD100N04-3m6_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQD100N04-3m6L_GE3 MOSFET N-Channel 40V AEC-Q101 Qualified
SQD100N03-3M4_GE3 MOSFET 30V 100A 136W N-Channel MOSFET
SQD10950E_GE3 MOSFET Automotive N-Channel 250 V (D-S) 175C MOSFET
SQD100N03-3M2L_GE3 MOSFET 30V 100A 136W N-Channel MOSFET
SQD100N04_3M6T4GE3 MOSFET 40V Vds 20V Vgs TO-252
SQD100N04-3M6-GE3 MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3
SQD19P06-60L-GE3 MOSFET RECOMMENDED ALT 78-SQD19P06-60L_GE3
SQD100N04-3M6L-GE3 MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE
Vishay
Vishay
SQD100N02_3M5L4GE3 MOSFET 20V Vds 20V Vgs TO-252
SQD100N04-3M6L_GE3 MOSFET N-CH 40V 100A TO252AA
SQD100N03-3M2L_GE3 MOSFET N-CH 30V 100A TO252AA
SQD100N03-3M4_GE3 MOSFET N-CH 30V 100A TO252AA
SQD100N04-3M6_GE3 MOSFET N-CH 40V 100A TO252AA
SQD10N30-330H_GE3 MOSFET N-CH 300V 10A TO252AA
SQD100N02-3M5L_GE3 MOSFET N-CH 20V 100A TO252AA
SQD15N06-42L_GE3 MOSFET N-CH 60V 15A
SQD19P06-60L_GE3 MOSFET P-CH 60V 20A TO252
SQD19P06-60L_T4GE3 MOSFET P-CH 60V 20A TO252AA
SQD100N04-3M6L-GE3 IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET
SQD100N03-3M2L-GE3 IGBT Transistors MOSFET 30V 100A 136W
SQD15N06-42L_GE3-CUT TAPE 신규 및 오리지널
SQD100A40 신규 및 오리지널
SQD100A60 신규 및 오리지널
SQD100A60S 신규 및 오리지널
SQD100M60 신규 및 오리지널
SQD100N02-3M5L-T4GE3 신규 및 오리지널
SQD100N03-3M2L 신규 및 오리지널
SQD100N03-3M4 신규 및 오리지널
SQD100N04-3M6 신규 및 오리지널
SQD100N04-3M6L 신규 및 오리지널
SQD100N043M6LGE3 Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SQD10N30-330H 신규 및 오리지널
SQD10N30-330H-GE3 신규 및 오리지널
SQD150M60 신규 및 오리지널
SQD15N06-42 신규 및 오리지널
SQD15N06-42L 신규 및 오리지널
SQD15N06-42L-GE3 N-CHANNEL 60V DPAK
SQD15N06-42L-T4GE3 신규 및 오리지널
SQD15N0642LDE3 신규 및 오리지널
SQD19P06-60L 신규 및 오리지널
SQD19P06-60L-E3 신규 및 오리지널
SQD19P06-60L-GE3 P-CHANNEL 60-V (D-S), 175C MOS
SQD19P06-60L-GE3 (PCN 신규 및 오리지널
SQD19P0660LGE3 신규 및 오리지널
Top