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| PartNumber | SQJ974EP-T1_GE3 | SQJ968EP-T1_GE3 | SQJ980AEP-T1_GE3 |
| Description | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | MOSFET Dual N-Channel 75V AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 75 V |
| Id Continuous Drain Current | 30 A | 23.5 A | 17 A |
| Rds On Drain Source Resistance | 21 mOhms, 21 mOhms | 28 mOhms, 28 mOhms | 41 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 30 nC, 30 nC | 18.5 nC, 18.5 nC | 21 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 48 W | 42 W | 34 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 27 S, 27 S | 16 S, 16 S | 14 S |
| Fall Time | 5 ns, 5 ns | 6.5 ns, 6.5 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns, 5 ns | 9 ns, 9 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 20 ns | 19.5 ns, 19.5 ns | 16 ns |
| Typical Turn On Delay Time | 10 ns, 10 ns | 8 ns, 8 ns | 9 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.13 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ974EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | |
| SQJ968EP-T1_GE3 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | ||
| SQJ980AEP-T1_GE3 | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | ||
| SQJ992EP-T1_GE3 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | ||
| SQJ968EP-T1-GE3 | DUAL N-CHANNEL 60-V (D-S) 175C | ||
| SQJ968EPT1GE3 | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ970EP-T1-GE3 | MOSFET 40V 8A 48W N-Ch Automotive | ||
| SQJ970EPT1-GE3 | 신규 및 오리지널 | ||
| SQJ974EP-T1-GE3 | 신규 및 오리지널 | ||
| SQJ980AEP | 신규 및 오리지널 | ||
| SQJ980AEP-T1-GE3 | DUAL N-CHANNEL 75-V (D-S) 175C | ||
| SQJ980AEPT1GE3 | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ980EP-T1-GE3 | 신규 및 오리지널 | ||
| SQJ992EP | 신규 및 오리지널 | ||
| SQJ992EP-T1-GE3 | Trans MOSFET N-CH 60V 15A Automotive 5-Pin(4+Tab) PowerPAK SO T/R | ||
Vishay |
SQJ968EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 | |
| SQJ974EP-T1_GE3 | MOSFET 2 N-CH 100V POWERPAK SO8 | ||
| SQJ980AEP-T1_GE3 | MOSFET 2 N-CH 75V POWERPAK SO8 | ||
| SQJ992EP-T1_GE3 | MOSFET 2N-CH 60V 15A POWERPAKSO8 |