STG

STGB14NC60KDT4 vs STGB10NC60KT4 vs STGB12NB60KDT4

 
PartNumberSTGB14NC60KDT4STGB10NC60KT4STGB12NB60KDT4
DescriptionIGBT Transistors PowerMESH&#34 IGBTIGBT 600V 20A 65W D2PAKIGBT 600V 30A 125W D2PAK
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB14NC60KDT4--
PackagingReel--
Continuous Collector Current Ic Max25 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Continuous Collector Current25 A--
Gate Emitter Leakage Current2 A--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
  • 시작
  • STG 909
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
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