 |  | | |
| PartNumber | TPN4R712MD,L1Q | TPN4R712MD | TPN4R712MD,L1Q(M |
| Description | MOSFET P-Channel Mosfet 20V UMOS-VI | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSON Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 4.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 65 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Series | TPN4R712MD | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 145 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 443 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Unit Weight | 0.000705 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
TPN4R712MD,L1Q | MOSFET P-Channel Mosfet 20V UMOS-VI | |
| TPN4R712MDL1QCT-ND | 신규 및 오리지널 | ||
| TPN4R712MDL1QDKR-ND | 신규 및 오리지널 | ||
| TPN4R712MDL1QTR-ND | 신규 및 오리지널 | ||
| TPN4R712MD | 신규 및 오리지널 | ||
| TPN4R712MD,L1Q | Trans MOSFET P-CH Si 20V 36A 8-Pin TSON Advance T/R | ||
| TPN4R712MD,L1Q(M | 신규 및 오리지널 | ||
| TPN4R712MDL1Q | 신규 및 오리지널 | ||
| TPN4R712MDL1Q(M | 신규 및 오리지널 |