IPB034N03LGXT

Mfr. #:: IPB034N03LGXT
제조사:: Infineon Technologies AG
설명:: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB034N03LGXT 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: IPB034N03LG, IPB034N03, IPB034, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB034N03LGXT 설명

***et: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263

***ark: Mosfet Transistor, N Channel, 25 A, 30 V, 0.004 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***roFlash: N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity: N Channel; Contin

***ure Electronics: Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ineon: Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

***nell: MOSFET, N-CH 30V 86A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 86A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dis

*** Source Electronics: Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS-T2 Power-Transistor

***ineon SCT: 40V, N-Ch, 4.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

***ure Electronics: Single N-Channel 40 V 4.1 mOhm 33 nC OptiMOS Power Mosfet - DPAK

***nell: MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 71W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications

***emi: N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***et Europe: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA

***emi: PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ

***ment14 APAC: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: PowerTrench® MOSFET, N-Channel, 40 V, 90 A, 3.2 mΩ

***ure Electronics: Single N-Channel 40 V 150 W 46 nC PowerTrench Surface Mount Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, AEC-Q101, N-CH, 90A, 40V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.2V; Power Dissipation Pd: 150W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

부분 #	제조	설명	재고	가격
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.6690 2000:$0.6791 1000:$0.7294
IPB034N03LGXT DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	10000:$0.7778 6000:$0.7983 4000:$0.8198 2000:$0.8426 1000:$0.8667

영상	부분 #	설명
	Mfr.#: IPB034N06L3GATMA1 OMO.#: OMO-IPB034N06L3GATMA1	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3GATMA1 OMO.#: OMO-IPB034N06L3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 90A TO263-3
	Mfr.#: IPB034N06L3GATMA1-CUT TAPE OMO.#: OMO-IPB034N06L3GATMA1-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IPB034N06L3GXT OMO.#: OMO-IPB034N06L3GXT-1190	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
	Mfr.#: IPB034N03LG OMO.#: OMO-IPB034N03LG-1190	신규 및 오리지널
	Mfr.#: IPB034N03LGATMA1 OMO.#: OMO-IPB034N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 80A TO-263-3
	Mfr.#: IPB034N06N3 OMO.#: OMO-IPB034N06N3-1190	신규 및 오리지널
	Mfr.#: IPB034N06N3GATMA1 OMO.#: OMO-IPB034N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A TO263-7
	Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G-124	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N03L G OMO.#: OMO-IPB034N03L-G-124	Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3

IPB034N03LGXT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes