IPB034N03

IPB034N03L G vs IPB034N03L vs IPB034N03LG

 
PartNumberIPB034N03L GIPB034N03LIPB034N03LG
DescriptionMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation94 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time5.4 ns5.4 ns-
Product TypeMOSFET--
Rise Time6.4 ns6.4 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns35 ns-
Typical Turn On Delay Time9.2 ns9.2 ns-
Part # AliasesIPB034N03LGATMA1 IPB34N3LGXT SP000304126--
Unit Weight0.056438 oz0.056438 oz-
Part Aliases-IPB034N03LGATMA1 IPB034N03LGXT SP000304126-
Package Case-TO-263-7-
Pd Power Dissipation-94 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-3.4 mOhms-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPB034N03L G MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
IPB034N03LGATMA1 MOSFET N-CH 30V 80A TO-263-3
IPB034N03LGXT Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1)
IPB034N03L 신규 및 오리지널
IPB034N03LG 신규 및 오리지널
IPB034N03L G Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
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