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IPB034N06L3 G

IPB034N06L3 G
Mfr. #:
IPB034N06L3 G
제조사:
Infineon Technologies
설명:
Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB034N06L3 G 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IPB034N06L3 G 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
OptiMOS 3
포장
릴
부분 별칭
IPB034N06L3GATMA1 IPB034N06L3GXT SP000398062
단위 무게
0.068654 oz
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
TO-263-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
167 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
13 ns
상승 시간
78 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
90 A
Vds-드레인-소스-고장-전압
60 V
Rds-On-Drain-Source-Resistance
3.4 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
64 ns
일반 켜기 지연 시간
25 ns
채널 모드
상승
Tags
IPB034N06L3G, IPB034N06L, IPB034N06, IPB034, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$0.8174
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3GATMA1
DISTI # IPB034N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB034N06L3 G
DISTI # SP000398062		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.0129
  • 2000:€0.8499
  • 4000:€0.7099
  • 6000:€0.6179
  • 10000:€0.5789
IPB034N06L3GXT
DISTI # IPB034N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.5899
  • 2000:$0.5689
  • 4000:$0.5479
  • 6000:$0.5299
  • 10000:$0.5199
IPB034N06L3GATMA1
DISTI # SP000398062		Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.8499
  • 2000:€0.6949
  • 4000:€0.6369
  • 6000:€0.5879
  • 10000:€0.5459
IPB034N06L3GATMA1
DISTI # 50Y2003		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, 175DEG C, 167W,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes0
  • 1:$1.5100
  • 10:$1.2900
  • 25:$1.2000
  • 50:$1.1200
  • 100:$1.0300
  • 250:$0.9640
  • 500:$0.8970
IPB034N06L3 G
DISTI # 726-IPB034N06L3G		Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant		13
  • 1:$1.5100
  • 10:$1.2900
  • 100:$1.0300
  • 500:$0.8970
  • 1000:$0.7440
IPB034N06L3GATMA1
DISTI # 726-IPB034N06L3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
RoHS: Compliant		60
  • 1:$1.5100
  • 10:$1.2900
  • 100:$1.0300
  • 500:$0.8970
  • 1000:$0.7440
IPB034N06L3GInfineon Technologies AGINSTOCK770
    IPB034N06L3GInfineon Technologies AG60V,3.4m,90A,N-Channel Power MOSFET500
    • 1:$1.1900
    • 100:$0.9900
    • 500:$0.8700
    • 1000:$0.8500
    IPB034N06L3GATMA1
    DISTI # 2480798    		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant    		6
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    IPB034N06L3GATMA1
    DISTI # 2480798RL    		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant    		0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    IPB034N06L3GATMA1
    DISTI # 2480798    		Infineon Technologies AGMOSFET, N-CH, 60V, 90A, TO-263-3
    RoHS: Compliant    		11
    • 5:£1.0400
    • 25:£0.9210
    • 100:£0.7880
    • 250:£0.7550
    • 500:£0.6850
    영상 부분 # 설명
    IPB034N03L G

    Mfr.#: IPB034N03L G

    OMO.#: OMO-IPB034N03L-G

    		 MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
    IPB034N06L3 G

    Mfr.#: IPB034N06L3 G

    OMO.#: OMO-IPB034N06L3-G

    		 MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    IPB034N06L3GXT

    Mfr.#: IPB034N06L3GXT

    OMO.#: OMO-IPB034N06L3GXT-1190

    		 Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1)
    IPB034N03LGXT

    Mfr.#: IPB034N03LGXT

    OMO.#: OMO-IPB034N03LGXT-1190

    		 Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1)
    IPB034N03L

    Mfr.#: IPB034N03L

    OMO.#: OMO-IPB034N03L-1190

    		 신규 및 오리지널
    IPB034N06L3

    Mfr.#: IPB034N06L3

    OMO.#: OMO-IPB034N06L3-1190

    		 신규 및 오리지널
    IPB034N06L3G

    Mfr.#: IPB034N06L3G

    OMO.#: OMO-IPB034N06L3G-1190

    		 60V,3.4m��,90A,N-Channel Power MOSFET
    IPB034N06N3

    Mfr.#: IPB034N06N3

    OMO.#: OMO-IPB034N06N3-1190

    		 신규 및 오리지널
    IPB034N06N3GATMA1

    Mfr.#: IPB034N06N3GATMA1

    OMO.#: OMO-IPB034N06N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 100A TO263-7
    IPB034N06N3 G

    Mfr.#: IPB034N06N3 G

    OMO.#: OMO-IPB034N06N3-G-126

    		 IGBT Transistors MOSFET N-Ch 60V 100A D2PAK-6
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    IPB034N06L3 G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.96
    US$0.96
    10
    US$0.91
    US$9.13
    100
    US$0.87
    US$86.54
    500
    US$0.82
    US$408.65
    1000
    US$0.77
    US$769.20
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