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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| NE3511S02-A DISTI # NE3511S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 70 Container: Bulk | Limited Supply - Call | |
| NE3511S02A DISTI # NE3511S02A | California Eastern Laboratories (CEL) | Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| NE3511S02-A DISTI # 551-NE3511S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 | |
| NE3511S02-A DISTI # NE3511S02-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET RoHS: Compliant | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
|
|
Mfr.#: NE3514S02-T1D-A OMO.#: OMO-NE3514S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
|
Mfr.#: NE3512S02-T1D-A OMO.#: OMO-NE3512S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
Mfr.#: NE3514S02-A OMO.#: OMO-NE3514S02-A-CEL |
RF JFET Transistors K Band Super Low Noise Amp N-Ch |
|
|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
|
Mfr.#: NE3510M04-T1-A OMO.#: OMO-NE3510M04-T1-A-1190 |
신규 및 오리지널 |
|
|
Mfr.#: NE3512S02-T1D-A/JT OMO.#: OMO-NE3512S02-T1D-A-JT-1190 |
신규 및 오리지널 |
|
Mfr.#: NE3513M04-T2-A OMO.#: OMO-NE3513M04-T2-A-CEL |
FET RF 4V 12GHZ M04 4SMD |
|
|
Mfr.#: NE3513M04-TB2 OMO.#: OMO-NE3513M04-TB2-1190 |
신규 및 오리지널 |
